Hydrogenated amorphous silicon germanium alloy with enhanced photosensitivity prepared by plasma enhanced chemical vapor deposition at high temperature

Yan, Baojun; Zhao, Lei; Zhao, Bo-Wei; Chen, Jingwei; Wang, Guanghong; Diao, Hongwei; Mao, Yuhao; Wang, Wenjing

doi:10.1016/j.vacuum.2012.09.004

Cited by 23 publications

(1 citation statement)

References 27 publications

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“…Thus far, SiGe has been used in the fields of microelectronics and optoelectronics as heterojunction bipolar transistors, [1][2][3] infrared detectors [4,5] and thin-film solar cells. [6][7][8] Moreover, nanostructured SiGe shows a considerable prospect of using it as thermoelectric material. [9,10] Recently, enhancements in thermoelectric figure-of-merit were reported in the nanocomposite SiGe alloys.…”

Section: Introductionmentioning

confidence: 99%

Segregations and desorptions of Ge atoms in nanocomposite Si _{1−
x} Ge _x films during high-temperature annealing

et al. 2017

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Nanocomposite Si 1−x Ge x films are deposited by dual-source jet-type inductively coupled plasma chemical vapor deposition (jet-ICPCVD). The segregations and desorptions of Ge atoms, which dominate the structural evolutions of the films during high-temperature annealing, are investigated. When the annealing temperature (T a ) is 900 • C, the nanocomposite Si 1−x Ge x films are well crystallized, and nanocrystals (NCs) with the core-shell structure form in the films. After being annealed at 1000 • C (above the melting point of bulk Ge), Ge atoms accumulate on the surfaces of Ge-rich films, whereas pits appear on films with lower Ge content, resulting from desorption. Meanwhile, voids are observed in the films. A cone-like structure involving the percolation of the homogeneous clusters and the crystallization of NCs enhances Ge segregation.

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Section: Introductionmentioning

confidence: 99%

Segregations and desorptions of Ge atoms in nanocomposite Si _{1−
x} Ge _x films during high-temperature annealing

et al. 2017

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Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells

Sun

Liu

et al. 2018

J Mater Sci: Mater Electron

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Si1–Ge deposition and properties

Nayfeh¹,

Hadi²

2023

Silicon-Germanium Alloys for Photovoltaic Applications

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Hydrogenated amorphous silicon germanium alloy with enhanced photosensitivity prepared by plasma enhanced chemical vapor deposition at high temperature

Cited by 23 publications

References 27 publications

Segregations and desorptions of Ge atoms in nanocomposite Si _{1−
x} Ge _x films during high-temperature annealing

Segregations and desorptions of Ge atoms in nanocomposite Si _{1−
x} Ge _x films during high-temperature annealing

Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells

Si1–Ge deposition and properties

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Hydrogenated amorphous silicon germanium alloy with enhanced photosensitivity prepared by plasma enhanced chemical vapor deposition at high temperature

Cited by 23 publications

References 27 publications

Segregations and desorptions of Ge atoms in nanocomposite Si 1− x Ge x films during high-temperature annealing

Segregations and desorptions of Ge atoms in nanocomposite Si 1− x Ge x films during high-temperature annealing

Double p-SiOx layers to improve the efficiency of p–i–n a-SiGe:H thin film solar cells

Si1–Ge deposition and properties

Contact Info

Product

Resources

About

Segregations and desorptions of Ge atoms in nanocomposite Si _{1−
x} Ge _x films during high-temperature annealing

Segregations and desorptions of Ge atoms in nanocomposite Si _{1−
x} Ge _x films during high-temperature annealing