Study of Phosphorus Doped Micro/Nano Crystalline Silicon Films Deposited by Filtered Cathodic Vacuum Arc Technique

Kesarwani, Ajay Kumar; Panwar, O. S.; Tripathi, Ratnakar; Dalai, M. K.; Chockalingam, Sreekumar

doi:10.1007/s12633-014-9237-8

Cited by 4 publications

(3 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Using filtered cathodic vacuum arc (FCVA) 24 technique Tripathi et al developed phosphorous doped hydrogenated amorphous silicon carbide (P doped a-SiC:H) thin film photo detectors at room temperature having fast response and recovery time. Later, 25 using the same technique Kesarwani et al synthesized phosphorus doped amorphous/nanocrystalline silicon thin film photo detectors in the presence of hydrogen gas having good fast response and recovery time. 26 Recently, Tripathi and others reported nc-Si:H based photo-detector having fast response time (4.92 s) and recovery time (4.06 s) using filtered cathodic vacuum arc technique at room temperature.…”

Section: Introductionmentioning

confidence: 99%

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Jadkar¹,

Pawbake²,

Jadhavar³

et al. 2019

ES Mater.Manuf.

View full text Add to dashboard Cite

In present study we have synthesized highly crystalline hydrogenated nanocrystalline silicon (nc-Si:H) thin films by hot wire method. The obtained thin films were characterized by using low angle-XRD, Raman spectroscopy, non-contact atomic force microscopy (NC-AFM) and UV-Visible spectroscopy. The low angle-XRD analysis revealed that the obtained nc-Si:H thin films are polycrystalline and have preferred orientation along (111) direction. Formation of nc-Si:H films are further confirmed by Raman spectroscopy analysis. The UV-Visible spectroscopy analysis showed that the synthesized films have sharp absorption edge in visible region and has direct band gap of 1. 94 eV. Finally, nc-Si:H based photo-detector have been prepared at optimized process parameters which show an excellent response time (1.79 s) and -8 4 -6 recovery time (1.71 s) along with responsivity ( 9.8x10 A/W), detectivity ( 5.5x10 Jones) and quantum efficiency ( 27.37x10 %). The obtained results demonstrate a significant step towards nc-Si:H based photo-detector for broadband photo-detection applications.

show abstract

Section: Introductionmentioning

confidence: 99%

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Jadkar¹,

Pawbake²,

Jadhavar³

et al. 2019

ES Mater.Manuf.

View full text Add to dashboard Cite

show abstract

“…[12][13][14][15][16][17][18] The vacuum cathodic arc has been employed extensively as a method of fabricating thin lm with origin that can be traced back 1892 with a patent of Edison. [12][13][14][15][16][17][18] The vacuum cathodic arc has been employed extensively as a method of fabricating thin lm with origin that can be traced back 1892 with a patent of Edison.…”

Section: Introductionmentioning

confidence: 99%

“…The ltered cathodic vacuum arc is an emerging technology which has been used for various kinds of materials, such as metals, metal oxides and metal nitrides, doped and undoped semiconductors. [12][13][14][15][16][17][18] The vacuum cathodic arc has been employed extensively as a method of fabricating thin lm with origin that can be traced back 1892 with a patent of Edison. 19,20 This technique utilizes the cathode vacuum arc discharge and produces high density metal plasma.…”

Section: Introductionmentioning

confidence: 99%

Characterization and electrochemical properties of a nickel film/carbon paper electrode prepared by a filtered cathodic vacuum arc technique

Wang

et al. 2015

RSC Adv.

View full text Add to dashboard Cite

A nickel film was prepared through plasma deposition of a metal onto a carbon paper (CP) substrate with the filtered cathodic vacuum arc technique. Nickel metal plasma was generated at a current of 90 A and deposited on the CP substrate for 3 seconds, forming the nickel film modified electrode. The morphology image of the nickel film on the substrate surface was characterized by scanning electron microscopy (SEM). The existence of the nickel film was verified by energy dispersive spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS). The results of the water contact angle measurement (WCA) showed that the existence of the nickel film improved the hydrophilicity of the CP. Cyclic voltammetry (CV) was carried out to investigate the electrochemical properties of the Ni/CP electrode. The nickel film provided a good electron conduction pathway and it improved the electron transfer ability of the substrate. It was found that the Ni/CP electrode exhibited good electrocatalytic oxidation behaviour towards glucose. Amperometric responses showed a good linear relationship with glucose concentration in the range from 2 mM to 500 mM with a detection limit of 0.6 mM. Thus this material is expected to have wide potential applications in glucose biosensors. Electrochemical characterization of Ni/CP electrodeCV was employed to investigate the electrochemical behaviour of the CP and Ni/CP electrode with the redox system serving as the probe such as [Fe(CN) 6 ] 3À /[Fe(CN) 6 ] 4À . Fig. 5 showed CVs for an aqueous solution of 5 mM [Fe(CN) 6 ] 3À /[Fe(CN) 6 ] 4À in 0.1 M 54778 | RSC Adv., 2015, 5, 54777-54782 This journal is

show abstract

Study on nanocrystalline silicon thin films grown by the filtered cathodic vacuum arc technique using boron doped solid silicon for fast photo detectors

Tripathi

Panwar

Rawal

et al. 2018

Journal of the Taiwan Institute of Chemical Engineers

View full text Add to dashboard Cite

Study of Phosphorus Doped Micro/Nano Crystalline Silicon Films Deposited by Filtered Cathodic Vacuum Arc Technique

Cited by 4 publications

References 31 publications

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Excellent Response and Recovery Time of Photo-Detectors Based on Nc-Si:H Films Grown by Using Hot Wire Method

Characterization and electrochemical properties of a nickel film/carbon paper electrode prepared by a filtered cathodic vacuum arc technique

Study on nanocrystalline silicon thin films grown by the filtered cathodic vacuum arc technique using boron doped solid silicon for fast photo detectors

Contact Info

Product

Resources

About