Study of oxygen transport in Czochralski growth of silicon

Effects of cusp-shaped magnetic field on melt convection and oxygen transport in an industrial CZ-Si crystal growth

“…The dissolution and amount of incorporated oxygen in the three cases are compared in Table 2. Only about 1-2% of the dissolved oxygen is incorporated into the grown crystal, which is consistent with the measurements [9,11]. With CMF absent, the percentage of oxygen incorporated into the grown crystal is maximized.…”

“…The oxygen transport mechanism in CZ-Si growth has been discussed in some studies [9][10][11][12]. Accurate control of oxygen concentration in a grown crystal is of prime importance to CZ-Si crystal growth technology.…”

Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals

“…Crystal and crucible rotation rates are fixed with, respectively, 16 and 0.5 rpm in the system because the melt flow is determined by various flow-driving source such as rotations of crystal and crucible [12]. Argon flow rate and furnace pressure are constant since the oxygen transport is strongly influenced by the Ar-flow at the melt surface eventually combined with the surface capillary flow [13]. The pulling rate of the crystal is changed to keep the crystal diameter constant.…”

Czochralskis schöpferischer Fehlgriff: ein Meilenstein auf dem Weg in die Gigabit‐Ära

“…Das verursacht Korrosionserscheinungen: Im Extremfall werden SiO 2 -Partikel in die Siliciumschmelze freigesetzt, die zu Versetzungen im Siliciumkristall führen können. Andererseits führt die Reaktion von Quarz mit flüssigem Silicium [38] entsprechend der Gleichung (1) [38,39] -diese Menge muss aber sehr genau eingehalten werden.…”