Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals

Hong, Yong-Ju; Sim, Bok-Cheol; Shim, Kwang-Bo

doi:10.1016/j.jcrysgro.2006.06.044

Cited by 9 publications

(4 citation statements)

References 14 publications

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“…The stronger MI in the lower section of the cusp-magnetic field grasps the larger amount of the silicon melt with increasing MR, and hence the melt flow is more stable. The stable flow results in higher k e in the crystal, and the oxygen concentration decreases [20]. k e increases with increasing MR as shown in Fig.…”

Section: Article In Pressmentioning

confidence: 80%

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Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Hong

Sim²,

Shim

2008

Journal of Crystal Growth

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Section: Article In Pressmentioning

confidence: 80%

“…The specific Ra and more details are shown in Ref. [20]. At the same free-surface position at fixed heater, the magnetic strength at the corner position of the crucible in the initial 150 kg melt is stronger than that of the initial 120 kg melt.…”

Section: Article In Pressmentioning

confidence: 99%

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Hong

Sim²,

Shim

2008

Journal of Crystal Growth

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“…The magnetic strengths are 210 and 240G with 128 A/230 A and 152 A/274 A, which represent the intensity of the horizontal component of the magnetic field orthogonal to crucible side wall at the zero-Gauss plane. Magnet field configuration and effect of the cusp-magnetic field on oxygen concentration 6) and point defect behavior 7) can be found in other papers.…”

Section: Critical Growth Rates With Various Cooling Rates Of the Ingotmentioning

confidence: 97%

Effect of the Ingot Cooling on the Grown-in Defects in Silicon Czochralski Growth

Sim¹,

Jung²,

Lee³

2009

Jpn. J. Appl. Phys.

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208 mm diameter single crystals are grown by Czochralski method with different growing conditions, and the effects of the ingot cooling on point defect behavior and the shape of the crystal-melt interface are experimentally investigated. In order to obtain various cooling rates of the ingot, cooling-water jacket is changed with various surface conditions, which are different emissivities of the material, and various melt gaps are applied in the experiments, where melt gap is defined as the distance from heat shield to the melt free-surface. The crystal-melt interface becomes more concave (convex to the crystal) and the critical pulling speed for defect-free crystal increases with increasing cooling rate of the ingot.

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“…It is possible to lower the oxygen content of silicon crystals formed by employing a CZ technique with a cusp magnetic field. [88][89][90][91][92][93][94] The impact of a cusp magnetic field on the melt flow, thermal field, and oxygen concentration during the CZ silicon crystal development process has been investigated using numerical simulation. The results demonstrate a decrease in oxygen concentration as a result of the secondary flow cell's shrinkage, which occurred between the Taylor-Proudman and buoyancy-driven vortices.…”

Section: Cz Processmentioning

confidence: 99%

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

Sekar,

Thamotharan,

Manickam

et al. 2023

Cryst. Res. Technol.

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Crystalline silicon (c‐Si) solar cells have been accepted as the only environmentally and economically acceptable alternative source to fossil fuels. The majority of commercially available solar cells of all Photovoltaic (PV) cells produced worldwide, are made of crystalline silicon. Due to their excellent price/performance ratio and their demonstrated ecological durability, crystalline silicon wafers are by far the most common absorber material used in the production of solar cells and modules today. These wafers are primarily made using either a directional solidification that produces large‐grained multi‐crystalline (mc‐Si) wafers with a greater defect density or a solar‐optimized Czochralski (Cz) growing method that produces crystalline silicon with low defect density (c‐Si). The grown crystalline wafer contains foreign atoms that enhance the wire saw damage, reduce the minority carrier lifetime as a result get the minimum conversion efficiency of the solar cells. The current review illustrates how the elements of the furnace system affect impurity production and distribution of the developed silicon ingot and how the growth process affects the chemical reaction. Additionally, it covers the outcomes of simulations and experiments conducted on the growing process of c‐Si and mc‐Si ingots and recommends the most appropriate processing parameters, geometrical system, and argon gas flow rate.

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Effect of zero-Gauss plane and magnetic intensity on oxygen concentration in cusp-magnetic CZ crystals

Cited by 9 publications

References 14 publications

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Distribution coefficient of boron in Si crystal ingots grown in cusp-magnetic Czochralski process

Effect of the Ingot Cooling on the Grown-in Defects in Silicon Czochralski Growth

A Critical Review of The Process and Challenges of Silicon Crystal Growth for Photovoltaic Applications

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