Study of oxygen and carbon species on Si substrate during in-situ cleaning prior to high-quality epitaxial deposition

Abstract

We investigated the effect of in-situ cleaning with ECR (Electron Cyclotron Resonance) hydrogen plasma. This cleaning was effective in removing oxygen and carbon on the wafer surface because of its high density and low substrate damage and, thus, high quality epitaxial films were deposited. The contents of the oxygen or carbon species were correlated with the structural quality of the interface and film. The possible reaction mechanisms for the cleaning of oxygen and carbon species were scrutinized. The removal of oxygen rather than of carbon, was crucial in obtaining high quality epitaxial films.