Hydrogen microwave plasma treatment of Si and SiO2

Altmannshofer, Stephan; Eisele, I.; Gschwandtner, A.

doi:10.1016/j.surfcoat.2016.07.038

Cited by 16 publications

(6 citation statements)

References 15 publications

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“…There are two reasons for that: (1) bigger particles shrink and take the place of smaller particles (hence, a relatively constant amount of small particles remained unchanged); (2) etching of Si by chemical sputtering of hydrogen radicals is only possible when accompanied by energetic electrons and ions from plasma breaking Si-Si bonds [31]. In that matter, the etching occurs at the place when particles interact with ions; hence, the particles are more to etch from the top rather than from the sides (it has been also demonstrated in AFM measurements [32]). It explains why the entire histogram does not strive toward the smaller side as a whole.…”

Section: Results For Lls Measurements Of Silicon Particles Exposed To...mentioning

confidence: 93%

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Shefer

Nikipelov

Kerkhof

et al. 2023

J. Phys. D: Appl. Phys.

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Laser Light Scattering (LLS) method, combined with a long-distance microscope was utilized to detect micrometer-sized particles on a smooth substrate. LLS was capable to detect individual particle release, shrink, or fragmentation during exposure to a plasma or a gas jet. In-situ monitoring of hundreds of particles was carried out to investigate the effect of hydrogen plasma exposure on particle adhesion, morphology, and composition. LLS was calibrated with monodisperse melamine resin spheres with known sizes of 2.14 μm, 2.94 μm, and 5.26 μm in diameter. The lowest achievable noise level of approximately 3% was demonstrated for counting 5.26 µm spherical melamine particles. The accuracy for melamine particle size measurements ranged from 50% for 2.14 μm particles to 10% for 5.26 μm particles. This scatter was taken as the imprecision of the method. Size distribution for polydisperse particles with known refractive index was obtained by interpolating to an effective scattering cross-section of a sphere using Mie theory. While the Abbe diffraction limit was about 2 μm in our system, the detection limit for Si particles in LLS according to Mie approximation was assessed to about 3 μm, given the limitations of the laser flux, microscope resolution, camera noise, and particle composition. Additionally, the gradual changes in forward scattering cross-sections for Si particles during the exposure to the hydrogen plasma were consistent with Si etching reported in the literature.

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Section: Results For Lls Measurements Of Silicon Particles Exposed To...mentioning

confidence: 93%

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Shefer

Nikipelov

Kerkhof

et al. 2023

J. Phys. D: Appl. Phys.

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“…To overcome the aforementioned issues, we treated the Si substrate surfaces with H 2 plasma to remove the native oxide layer and eliminate the dangling bonds [ 10 , 11 ]. The H 2 plasma power was set to 30 W for 10, 30, and 60 s at room temperature.…”

Section: Resultsmentioning

confidence: 99%

“…The guard ring structure of p + poly Si and metal oxide were studied to suppress the leakage current of the SBDs [ 6 , 7 , 8 ]. The interface between the substrate with existed multiple defects can also be removed by a treating plasma cleaning process and an annealing process [ 9 , 10 , 11 ]. Low-temperature processes are also important for the semiconductor industry because they help avoid unintentional diffusion effects and unwanted chemical reactions.…”

Section: Introductionmentioning

confidence: 99%

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

Cheng

Houng

et al. 2018

Materials

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In this study, the design and fabrication of AZO/n-Si Schottky barrier diodes (SBDs) with hydrogen plasma treatment on silicon surface and AlxOx guard ring were presented. The Si surface exhibited less interface defects after the cleaning process following with 30 w of H2 plasma treatment that improved the switching properties of the following formed SBDs. The rapid thermal annealing experiment also held at 400 °C to enhance the breakdown voltage of SBDs. The edge effect of the SBDs was also suppressed with the AlxOx guard ring structure deposited by the atomic layer deposition (ALD) at the side of the SBDs. Experimental results show that the reverse leakage current was reduced and the breakdown voltage increased with an addition of the AlxOx guard ring. The diode and fabrication technology developed in the study were applicable to the realization of SBDs with a high breakdown voltage (>200 V), a low reverse leakage current density (≤72 μA/mm2@100 V), and a Schottky barrier height of 1.074 eV.

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“…Si 3 N 4 and GaN can easily be decomposed to volatile products via Si + 4H ⇌ SiH 4 , 2N + 3H 2 ⇌ 2NH 3 , and 2Ga + H 2 ⇌ 2GaH reactions in an H 2 -plasma chamber. ,, It has been shown by Tiwari and Chang that higher pressures and longer growth times increase both lateral size and etch depth of pits in GaN . Reported studies of the pressure impact on Ga, Si, and N desorption rate state that Ga and Si desorption are independent of pressure (<100 Torr), while N desorption enhances with pressure. , This suggests that increasing the pressure of H 2 plasma reduces the barrier for both Si 3 N 4 and GaN etching from the surface.…”

Section: Growth Recipementioning

confidence: 99%

Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology

Malakoutian

Ren

Woo

et al. 2021

Crystal Growth & Design

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Integration of diamond on GaN can ease the challenges associated with thermal management of GaN-based power amplifiers which need to base on highly scaled transistors to push toward higher frequencies at high powers for 5G networks. The integration of diamond was achieved by growing polycrystalline (PC) diamond on nitrogen-polar GaN. A standard 5 nm Si3N4 layer which forms the gate dielectric was used as an interlayer between diamond and the GaN channel for etching protection. Since diamond growth conditions involve high temperature and H2 plasma, it can easily decompose the underlying dielectric as well as the GaN channel and degrade the channel conductivity and hence the device performance. Due to the incompatibility of conventional growth recipes with thin dielectrics (<5 nm), a novel two-stage-three-step growth recipe was designed for PC diamond integration on top of nitrogen-polar GaN high-electron-mobility transistors in a H2/CH4-plasma environment. Using only H2 and CH4 in the chamber guarantees a higher-phase-purity diamond than chambers with added argon or nitrogen for lower substrate etching. This recipe maintains the performance of the two-dimensional-electron gas and provides a less columnar diamond structure with a larger grain size. Our observations were supported by scanning transmission electron microscopy and Hall mobility measurements using the van der Pauw technique before and after diamond growth. A mobility of ∼1250 cm2/V s, a sheet carrier concentration of ∼1.30 × 1013 cm–2, and a sheet resistivity of ∼380 Ω/□ were maintained after the growth of diamond. The anisotropy ratio has been decreased from 3.75 to 1.12 with this growth recipe. Using long channel devices, we measured the difference in the channel temperature, which decreased by more than 100 °C in the range of 10–24 W/mm power after the integration of the diamond on top of the device.

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Hydrogen microwave plasma treatment of Si and SiO2

Cited by 16 publications

References 15 publications

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Laser light scattering (LLS) to observe plasma impact on the adhesion of micrometer-sized particles to a surface

Electric Characteristic Enhancement of an AZO/Si Schottky Barrier Diode with Hydrogen Plasma Surface Treatment and AlxOx Guard Ring Structure

Development of Polycrystalline Diamond Compatible with the Latest N-Polar GaN mm-Wave Technology

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