Study of microscopic mechanisms of electrical compensation of donors in CdS by fast diffusors (Cu, Ag, or Au)

The effect of small addition of copper on the growth process, structure, surface charge and adsorption properties of ZnO films in the pyrolysis of dithiocarbamates

“…The diffusion of Cu into the ZnS lattice is supposed to be governed by interstitial and substitutional mechanisms. [123][124][125] It was confirmed that the ion exchange mechanism of Zn 2+ by Cu 2+ occurs on the surface, followed by a redox reaction of the adsorbed Cu 2+ into Cu + and S 2À into S À , which leads to the formation of a Cu(I)-sulfide layer on the sphalerite surface. 126 Moreover, it was found that the copper uptake was lower in the presence of oxygen.…”

Defect interactions of group-I elements in cubic II-VI compounds

“…In probe. 11 In the light of the observation of substitutional group-I acceptors in CdTe by 77 Br probe atoms ͑e.g.,…”

Au doping of CdS polycrystalline films prepared by co-sputtering of CdS–Cd-Au targets

“…In addition, Hall measurements indicate that Au doped CdS films are p-type, since Au most likely acts as acceptor by substituting Cd atoms [22].The formation of Cd vacancies (V Cd ) is the main defect responsible for doping compensation in CdS:Au, in our case the co-sputtering of CdS-Cd-Au avoids the formation of a large V Cd -density, giving as result an effective p-doping of CdS by the gold atoms, similar to In doped CdTe [23]. In order to compensate the absence of one positive charge in the Au + ion when it substitutes the Cd 2+ a vacancy of S 2is needed for every-two Au + cations present in the lattice.…”