2009
DOI: 10.1016/j.tsf.2008.09.097
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Study of manganese oxide thin films grown by pulsed laser deposition

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Cited by 36 publications
(30 citation statements)
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“…In the region from 500 to 400 cm À1 , the absorption peak observed at 420.80 and 451.34 cm À1 may be originating from the Mn atoms in the films and attributed to the band stretching modes of the octahedral sites [21]. The peak observed at 736.81 cm À1 may be attributed to the O atoms in the MnO layers [22]. The peak at 817.82 and 852.54 cm À1 may be due to overtone modes of bulk MneO stretching's of Mn 3 O 4 [23].…”
Section: Ftir Studymentioning
confidence: 96%
“…In the region from 500 to 400 cm À1 , the absorption peak observed at 420.80 and 451.34 cm À1 may be originating from the Mn atoms in the films and attributed to the band stretching modes of the octahedral sites [21]. The peak observed at 736.81 cm À1 may be attributed to the O atoms in the MnO layers [22]. The peak at 817.82 and 852.54 cm À1 may be due to overtone modes of bulk MneO stretching's of Mn 3 O 4 [23].…”
Section: Ftir Studymentioning
confidence: 96%
“…However, this method applies high-energy pulses which may cause undesirable defects in the structure, and thereby change the electronic behavior of the films. PLD has been used to deposit various binary compounds [32][33][34][35][36][37][38][39][40][41][42][43][44][45][46][47].…”
Section: Introductionmentioning
confidence: 99%
“…In this context manganese oxides are the most promising materials due to its low cost, environment friendly in nature and excellent performance [20][21][22]. Manganese oxide films have been prepared by different methods including sol-gel method [23][24][25][26][27][28][29], electrochemical deposition method [30][31][32], and physical vapor deposition method [33][34][35] etc. The values of specific capacitance of manganese oxide film are reported as 240 F g À1 [30], 243.2 F g À1 [32], 328 F g À1 [25], etc.…”
Section: Introductionmentioning
confidence: 99%