Study of luminescent defects in hafnia thin films made with different deposition techniques

Ciapponi, Alessandra; Wagner, Frank; Palmier, Stéphanie; Natoli, Jean-Yves; Gallais, Laurent

doi:10.1016/j.jlumin.2009.02.026

Cited by 21 publications

(16 citation statements)

References 16 publications

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“…[13][14][15][16][17][18]. This PL emission band in the aforementioned study was attributed to the presence of O vacancies [14][15][16][17].…”

Section: Photoluminescence Studiesmentioning

confidence: 75%

“…Kiisk et al also reported that the intensity of the PL emission of HfO 2 increased due to its defects and self-trapped excitons [14]. Ciapponi et al further investigated the PL position and intensity changes with respect to the various different preparation methods [15]. Eliziário et al showed that for rice-like HfO 2 , which has an E gap value of 3.31 eV, the PL behavior was related to the oxygen vacancies and to the structural distortions of the stacking of the [HfO 6 ] clusters [16].…”

Section: Introductionmentioning

confidence: 99%

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Oxygen vacancy relationship to photoluminescence and heat treatment methods in hafnium oxide powders

Chuang

Lin

Chen³

2012

Journal of Alloys and Compounds

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“…[13][14][15][16][17][18]. This PL emission band in the aforementioned study was attributed to the presence of O vacancies [14][15][16][17].…”

Section: Photoluminescence Studiesmentioning

confidence: 75%

Section: Introductionmentioning

confidence: 99%

Oxygen vacancy relationship to photoluminescence and heat treatment methods in hafnium oxide powders

Chuang

Lin

Chen³

2012

Journal of Alloys and Compounds

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“…Figure 24 in the nanosecond regime is initiated by localized nanoabsorbing defects. For the widely used HfO 2 /SiO 2 combination, metallic Hf nano-clusters, off-stoichiometric HfO 2 nano-clusters, or areas of high-density electronic defects have been speculated as possible sources for triggering LID [68,69]. Real nano-absorbing defects are still not detectable with current technology due to their very small size and localized property.…”

Section: Non-visible Absorbing Defectsmentioning

confidence: 99%

Defect-related properties of optical coatings

Cheng¹,

Wang²

2014

Advanced Optical Technologies

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Defects in optical coatings are a major factor degrading their performance. Based on the nature of defects, we classified them into two categories: visible defects and non-visible defects. Visible defects result from the replication of substrate imperfections or particulates within the coatings by subsequent layers and can increase scattering loss, produce critical errors in extreme ultraviolet lithography, weaken mechanical and environmental stability, and reduce laser damage resistance. Non-visible defects mainly involve a decrease in laser damage resistance but typically have no influence on other properties of optical coatings. In the case of widely used HfO 2 /SiO 2 dielectric coatings, metallic Hf nano-clusters, off-stoichiometric HfO 2 nano-clusters, or areas of high-density electronic defects have been postulated as possible sources for non-visible defects. The emphasis of this review is devoted to discussing localized defect-driven laser-induced damage (LID) in optical coatings used for nanosecond-scale pulsed laser applications, but consideration is also given to other properties of optical coatings such as scattering, environmental stability, etc. The low densities and diverse properties of defects make the systematic study of LID initiating from localized defects time-consuming and very challenging. Experimental and theoretical studies of localized defect-driven LID using artificial defects whose properties can be well controlled are highlighted.

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“…Nevertheless, films produced via oxide evaporation show higher absorption and lower UVns-pulse damage thresholds. 11 The therrmodynamic modeling of cluster formation in an evaporation plume, and also during film growth, is needed in order to evaluate the realistic cluster fraction inside the metal oxide film.…”

Section: B Phi and Afm Mapping Of Hfo 2 Damage Morphologymentioning

confidence: 99%

“…Photoluminescence excited in hafnia thin films by 266-nm, 4.66-eV photons revealed a rich spectrum attributable to absorption from electronic defect states. 11 Fig. 12 shows that the energy levels of oxygen ion vacancy defect states (V þ and V 2þ ) inside the HfO 2 bandgap 3 are high enough to permit electron transition into the conduction band via the absorption of 355-nm, 3.5-eV photons.…”

Section: B Phi and Afm Mapping Of Hfo 2 Damage Morphologymentioning

confidence: 99%

Near-ultraviolet absorption and nanosecond-pulse-laser damage in HfO2 monolayers studied by submicrometer-resolution photothermal heterodyne imaging and atomic force microscopy

Papernov

Tait

Bittle

et al. 2011

Journal of Applied Physics

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Study of luminescent defects in hafnia thin films made with different deposition techniques

Cited by 21 publications

References 16 publications

Oxygen vacancy relationship to photoluminescence and heat treatment methods in hafnium oxide powders

Oxygen vacancy relationship to photoluminescence and heat treatment methods in hafnium oxide powders

Defect-related properties of optical coatings

Near-ultraviolet absorption and nanosecond-pulse-laser damage in HfO2 monolayers studied by submicrometer-resolution photothermal heterodyne imaging and atomic force microscopy

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