Study of iodine diffusion in silicon carbide

Friedland, E.; Berg, N.G. van der; Malherbe, J.B.; Kuhudzai, R.J.; Botha, André; Wendler, E.; Wesch, W.

doi:10.1016/j.nimb.2010.04.015

Cited by 26 publications

(25 citation statements)

References 7 publications

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“…Our previous iodine retention studies [4] also support this presumption. In that work no iodine loss was observed after annealing for 60 hours at 1100 °C.…”

Section: Iodine Transportsupporting

confidence: 62%

“…This is obviously not the case, which points to a chemical reaction binding the iodine to the silicon carbide lattice. The observed surface structure after prolonged high temperature annealing is very similar to those of iodine implanted single crystalline samples [4]. In contrast to this behaviour the high temperature implants exhibit the original polycrystalline structure, which does not change even after 60 hours annealing at 1300 °C.…”

Section: Iodine Transportsupporting

confidence: 59%

“…In recent studies on iodine diffusion in silicon carbide, extremely low diffusion coefficients were observed at temperatures up to 1000 ºC [3,4]. However, at 1200 ºC diffusion increased dramatically in highly disordered silicon carbide obtained by room temperature implantation, while very little iodine was lost through the surface [4]. This is indicative of a transport process related to chemical reactions between iodine and silicon carbide in this temperature region.…”

Section: Introductionmentioning

confidence: 91%

“…The different implantation temperatures made it possible to compare the evolution of transport processes in initially amorphous and crystalline silicon carbide. A detailed description of the experimental techniques used is given elsewhere [4].…”

Section: Experiments and Analysismentioning

confidence: 99%

“…Strontium is due to its chemical similarity to calcium easily deposited in bones, while iodine is absorbed in the thyroid gland with a biological half-life of approximately 140 days. In recent studies on iodine diffusion in silicon carbide, extremely low diffusion coefficients were observed at temperatures up to 1000 ºC [3,4]. However, at 1200 ºC diffusion increased dramatically in highly disordered silicon carbide obtained by room temperature implantation, while very little iodine was lost through the surface [4].…”

Section: Introductionmentioning

confidence: 98%

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Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Friedland

Berg

Malherbe

et al. 2012

Journal of Nuclear Materials

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Abstract.The transport behaviour of strontium and iodine through single and poly crystalline SiC wafers was investigated using ion beam analysis and electron microscopy. Fluences of 2×10 16 Sr + cm -2 and 1×10 16 I + cm -2 were implanted at temperatures between 23 °C and 600 °C with an energy of 360 keV, producing an atomic density of approximately 1.5% at the projected ranges of about 120 nm and 90 nm respectively. The broadening of the implantation profiles and its dependence on implantation parameters was determined by isochronal and isothermal annealing studies at temperatures up to 1400 °C. The strong influence of radiation damage on diffusion after room temperature implantations was observed in all cases during the initial annealing stages at 1000 °C. This is a result of the highly disordered crystal lattice, which re-crystallizes at this temperature. In hot implantations this effect is largely reduced but an additional transient diffusion process was observed at 1400 °C for strontium, which is related to defect annealing. Impurity trapping by extended defects is obviously an important effect.

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“…Our previous iodine retention studies [4] also support this presumption. In that work no iodine loss was observed after annealing for 60 hours at 1100 °C.…”

Section: Iodine Transportsupporting

confidence: 62%

Section: Iodine Transportsupporting

confidence: 59%

Section: Introductionmentioning

confidence: 91%

Section: Experiments and Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 98%

See 3 more Smart Citations

Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Friedland

Berg

Malherbe

et al. 2012

Journal of Nuclear Materials

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Influence of radiation damage on diffusion of fission products in silicon carbide

Friedland

Hlatshwayo

Berg

2013

Phys. Status Solidi C

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The influence of irradiation induced damage on the transport of implanted species in poly and single crystalline silicon carbide is investigated. For this purpose published diffusion results of strontium, silver, iodine and cesium are compared with the associated evolution of defect profiles determined by α-particle channelling in a backscattering geometry. Strong diffusion takes place in the amorphized surface layer of room temperature implanted 6H-SiC during annealing at 1100 °C, which drops below the detection limit of 10 -21 m 2 s -1 as soon as re-crystallization is completed. Diffusion in samples implanted above the critical amorphization temperature is only observed when simultaneously a significant reduction of defect density occurs. No diffusion into the undamaged bulk is detected at temperatures up to 1500 °C. The observed diffusion behaviour is explained by a defect related trapping and release mechanism. Normal grain boundary diffusion of silver and iodine occurs in CVD-SiC.

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Wetting and interfacial behavior of molten Al–Si alloys on SiC monocrystal substrates: effects of Cu or Zn addition and Pd ion implantation

Huang

Liu

et al. 2018

J Mater Sci: Mater Electron

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Study of iodine diffusion in silicon carbide

Cited by 26 publications

References 7 publications

Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Influence of radiation damage on diffusion of fission products in silicon carbide

Wetting and interfacial behavior of molten Al–Si alloys on SiC monocrystal substrates: effects of Cu or Zn addition and Pd ion implantation

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