Study of integration issues in shallow trench isolation for deep submicron CMOS technologies

Chatterjee, Amitava; Mason, Mark E.; Joyner, K.; Rogers, D.; Mercer, Doug; Kuehne, John; Esquivel, A.L.; Mei, P.; Murtaza, S.S.; Taylor, Kelly; Ali, Iqbal; Nag, Soumya Shubhra; O’Brien, S.; Ashburn, S.; Chen, Ih-Chin

doi:10.1117/12.250874

SPIE Proceedings

1996

DOI: 10.1117/12.250874

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Study of integration issues in shallow trench isolation for deep submicron CMOS technologies

Amitava Chatterjee

Mark E. Mason

K. Joyner

et al.

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1997

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“…8 Possible STI process integration schemes have been discussed in some of the early publications. [9][10][11] The focus of this paper is on trench fill using chemical vapor deposited (CVD) SiO 2 film to achieve void-free gap filling capability as well as etch resistance to later process steps, i.e., chemical mechanical polishing (CMP) and HF dip. To date, the available options for such trench fill include ozone/tetraethylorthosilicate (TEOS)-based thermal process using atmospheric pressure, low pressure, and subatmospheric (SA) CVD, and silane-based high-density plasma (HDP) process.…”

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confidence: 99%

High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

Xia

Nemani

Galiano

et al. 1999

J. Electrochem. Soc.

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Undoped silicate glass deposited using the tetraethylorthosilicate (TEOS) and ozone thermal reaction has been selected as one of the candidates for shallow trench isolation applications. As a replacement for existing low pressure or atmospheric pressure chemical vapor deposition processes for device dimensions below 0.25 μm, TEOS/ozone films deposited at high temperature (>550°C) exhibit the superior qualities in terms of void‐free trench fill. In this paper, we present some characterization of the silicon oxide film deposited in the subatmospheric pressure regime using TEOS/ozone chemistry, aimed at developing a high‐quality dielectric film to meet shallow trench isolation gap‐fill requirements. It is also identified that low ozone/TEOS ratio reduces surface and pattern sensitivity. Therefore, no additional treatment or predeposition is necessary. Moreover, to enhance the etch resistance of the silicon oxide, the as‐deposited film is annealed at high temperature for densification and bond reconstruction. © 1999 The Electrochemical Society. All rights reserved.

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mentioning

confidence: 99%

High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

Xia

Nemani

Galiano

et al. 1999

J. Electrochem. Soc.

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Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology

Chatterjee¹

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Articles you may be interested inShallow trench isolation stress modification by optimal shallow trench isolation process for sub-65-nm low power complementary metal oxide semiconductor technology J. Vac. Sci. Technol. B 28, 391 (2010); 10.1116/1.3359612 Chemical mechanical polishing of shallow trench isolation using the ceria-based high selectivity slurry for sub-0.18 μm complementary metal-oxide-semiconductor fabrication Critical dimension control optimization methodology on shallow trench isolation substrate for sub-0.25 μm technology gate patterning Arsenic doped buried plate characterization in deep trenches for a 0.25 μm complementary metal-oxide-semiconductor technology by chemical etching Round-off of trench corner by post-cylindrical molecular pump sidewall oxidation for 0.25 μm and beyond technologies J.This article presents a study of the issues in integrating the pattern, fill, planarization, and surface cleanup processes to design a shallow trench isolation ͑STI͒ flow suitable for 0.25 m complementary metal-oxide semiconductor technologies. Technological choices and their effects on the characteristics of the STI technology are discussed. Experimental data are presented to illustrate how process choices at various stages of the STI flow are made to optimize the STI structure.

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Study of integration issues in shallow trench isolation for deep submicron CMOS technologies

Cited by 2 publications

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High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

High Temperature Subatmospheric Chemical Vapor Deposited Undoped Silicate Glass: A Solution for Next Generation Shallow Trench Isolation

Integration of unit processes in a shallow trench isolation module for a 0.25 μm complementary metal–oxide semiconductor technology

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