Study of influence of pre-pulse power on xe capillary discharge EUV source

Xu, Qianfan; Zhao, Yijun; Xie, Yong‐Rong; Li, Qi; Wang, Qi

doi:10.1109/icoom.2013.6626509

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2023

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“…Lithography technology plays crucial roles in semiconductor integrated chip manufacturing, and lithography resolution is directly related to the process node. Lithography light source has developed from ultraviolet: 436 nm (g-line), 405 nm (hline), 365 nm (i-line) to deep ultraviolet (DUV) 248 nm (KrF), 193 nm (ArF) and then to extreme ultraviolet (EUV) 13.5 nm [1][2][3] . The projection objective numerical aperture has been constantly increasing from 0.28 to 1.35.…”

Section: Introductionmentioning

confidence: 99%