Study of hydrogenated AlN as an anti‐reflective coating and for the effective surface passivation of silicon

Krugel, Georg; Sharma, Aashish; Wolke, W.; Rentsch, J.; Preu, R.

doi:10.1002/pssr.201307153

Cited by 21 publications

(18 citation statements)

References 24 publications

(39 reference statements)

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“…A highly transparent and conductive passivation layer would be ideal for the application at the front surface of solar cells, as it can, besides providing passivation, also assist in the current collection. Although in the last few years several new passivation materials have been discovered, 3 including AlN, 4 TiO x , 5 GaO x , 6 TaO x , 7 HfO x , 8 PO x , 9 NbO x , 10 and ZrO x , 11 sufficient passivation by a transparent conductive oxide (TCO) has not yet been achieved. In this work, we report on outstanding passivation of the c-Si surface by ZnO, a material that is widely used in the field of photovoltaics as TCO.…”

Section: Introductionmentioning

confidence: 99%

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

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Section: Introductionmentioning

confidence: 99%

Silicon surface passivation by transparent conductive zinc oxide

Loo

Macco

Melskens

et al. 2019

Journal of Applied Physics

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“…Recently, we have demonstrated that AlO x films deposited by sputtering can provide excellent surface passivation 11. Other material for which successful passivation by sputter‐ing have been reported include SiN x 12 and AlN x 13.…”

Section: Introductionmentioning

confidence: 99%

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

Zhang

Hargreaves

Wan

et al. 2013

Physica Rapid Research Ltrs

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This letter shows that intrinsic hydrogenated amorphous silicon (a‐Si:H) films deposited by RF magnetron sputtering can provide outstanding passivation of crystalline silicon surfaces, similar to that achieved by plasma enhanced chemical vapour deposition (PECVD). By using a 2% hydrogen and 98% argon gas mixture as the plasma source, 1.5 Ω cm n‐type FZ silicon wafers coated with sputtered a‐Si:H films achieved an effective lifetime of 3.5 ms, comparable to the 3 ms achieved by PECVD (RF and microwave dual‐mode). This is despite the fact that Fourier transform infrared spectroscopy measurements show that sputtering and PECVD deposited films have very different chemical bonding configurations. We have found that film thickness and deposition temperature have a significant impact on the passivation results. Self‐annealing and hydrogen plasma treatment during deposition are likely driving forces for the observed changes in surface passivation. These experimental results open the way for the application of sputtered a‐Si:H to silicon heterojunction solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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“…Passivation of such surfaces has historically been a major challenge in the PV industry, however it has become more feasible through the use of the negatively charged dielectric aluminum oxide (Al 2 O 3 ) . Even more recently, several other dielectrics featuring negative charges have also been reported to provide a reasonable level of passivation to p + surfaces including titanium oxide, aluminium nitride, and gallium oxide …”

Section: Summary Of the Cell Results With Different Laser Ablation Pumentioning

confidence: 99%

Laser‐Patterned n‐Type Front‐Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection

Wan

Hsiao²,

Zhang³

et al. 2018

Solar RRL

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This work demonstrates, for the first time, a tantalum oxide/silicon nitride (Ta 2 O 5 /SiN x ) stack as a combined passivation and antireflection coating deposited on the boron-diffused front surface of n-type silicon solar cells. Due to the high chemical resistance of Ta 2 O 5 , the patterning of the films is realized via picosecond laser ablation, followed by a field-induced metal plating of nickel and copper to form the front metal grid electrode. A solar cell conversion efficiency of 19.3% is achieved, and further improvements are anticipated from the optimization of the laser ablation process and the tuning of the thickness of the individual layers of the dielectric stack.

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Study of hydrogenated AlN as an anti‐reflective coating and for the effective surface passivation of silicon

Cited by 21 publications

References 24 publications

Silicon surface passivation by transparent conductive zinc oxide

Silicon surface passivation by transparent conductive zinc oxide

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

Laser‐Patterned n‐Type Front‐Junction Silicon Solar Cell With Tantalum Oxide/Silicon Nitride Passivation and Antireflection

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