Study of High-Temperature MEMS Pressure Sensor Based on SiC-AlN Structure

Abstract

In the paper, a touch mode capacitive pressure sensor with double-notches structure is presented. The sensor employs a special SiC-AlN-SiC sandwich structure to achieve high-accuracy pressure measurement in hash environment such as high-temperature. The analysis to the relation of capacitance and external pressure of the sensor shows that the sensor has high sensitivity and long linear range simultaneously. In addition, the technical process of the sensor has been designed in detail in the paper. The research shows that the sensor packaged in a high-temperature ceramic AlN can withstand higher temperature. Consequently, the sensor can be applied in high-temperature and harsh environment.

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“…Well-crystallized AlN exhibits a perfect c-axis orientation and consequently intense piezoelectric activity. Hence, it is predicted that AlN thin films will also be used for sensor applications [33,34]. However, high residual stresses often observed in polycrystalline AlN thin films make integration difficult.…”