2015
DOI: 10.1063/1.4927913
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Study of harsh environment operation of flexible ferroelectric memory integrated with PZT and silicon fabric

Abstract: Articles you may be interested in Flexible nonvolatile memory transistors using indium gallium zinc oxide-channel and ferroelectric polymer poly(vinylidene fluoride-co-trifluoroethylene) fabricated on elastomer substrate

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Cited by 43 publications
(25 citation statements)
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References 36 publications
(42 reference statements)
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“…Perovskite lead zirconium titanate [Pb(Zr,Ti)O 3 ; PZT] ( 11 ) having large polarization, fast polarization switching, high Curie temperature, low coercive field, and a high piezoelectric coefficient, is probably the most explored system for these applications. The flexible version of polycrystalline PZT–based NVM has been demonstrated on Si ( 12 , 13 ), Pt foil ( 14 ), Cu foil ( 15 ), and Ni superalloy ribbons ( 16 ) or built on Si and then transferred on to flexible polymer substrates ( 17 , 18 ). It has long been postulated that single-crystalline functional oxides could resolve the critical issue of memory retention time in current technologies.…”
Section: Introductionmentioning
confidence: 99%
“…Perovskite lead zirconium titanate [Pb(Zr,Ti)O 3 ; PZT] ( 11 ) having large polarization, fast polarization switching, high Curie temperature, low coercive field, and a high piezoelectric coefficient, is probably the most explored system for these applications. The flexible version of polycrystalline PZT–based NVM has been demonstrated on Si ( 12 , 13 ), Pt foil ( 14 ), Cu foil ( 15 ), and Ni superalloy ribbons ( 16 ) or built on Si and then transferred on to flexible polymer substrates ( 17 , 18 ). It has long been postulated that single-crystalline functional oxides could resolve the critical issue of memory retention time in current technologies.…”
Section: Introductionmentioning
confidence: 99%
“…[29][30][31][32][33][34][35] Although thinning down silicon leads to a reduced thermal capacitance and faster heating up and cooling down rate, it does not affect the constant load saturation temperature, which is the temperature achieved under constant load at thermal equilibrium. To address a paradox like performance enhancement and higher power consumption with bulky electronics, and inspired by the world's most energy efficient (20W power consumption) computer -human brain's morphology and its cooling architecture through the nasal cavity and fluidic channels, 36,37 we show an equivalent substrate structure decorated with an embedded deterministic pattern of porous network of vertical micro-channels for air flow.…”
Section: Introductionmentioning
confidence: 99%
“…Aluminum and multilayer nickel/aluminum hard masks were also used to etch 200 µm deep trenches in silicon . The deep etching ability has enabled bulk micromachining to fabricate micromotors, electrostatic resonators, optical filters, microlenses, thermal actuators, MEMS switches, capacitive sensors, and actuators, and lately flexible and stretchable electronic devices …”
Section: Summary Of Key Deep Etching Work Over the Past Few Decadesmentioning
confidence: 99%