Study of growth kinetics in silicon gas source molecular beam epitaxy with disilane using RHEED intensity oscillations

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Study of growth kinetics in silicon gas source molecular beam epitaxy with disilane using RHEED intensity oscillations

Cited by 13 publications

References 17 publications

Determination of the sticking coefficient of disilane on Si(001) using the first reflection high energy electron diffraction oscillation period

Determination of the sticking coefficient of disilane on Si(001) using the first reflection high energy electron diffraction oscillation period

Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?

B-doped Si(001)2 × 1 gas-source molecular-beam epitaxy from Si2H6 and B2H6

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