Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?

Werner, K.; Butzke, S.; Radelaar, S.; Balk, P.

doi:10.1016/0022-0248(94)90436-7

Cited by 15 publications

(4 citation statements)

References 19 publications

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“…Information on heterogeneous elementary reactions which occur in the pyrolysis of silane on the surface of a solid product formed, viz., amorphous hydrogenated silicon is rather scarce. However, the mechanism of silicon growth on the well-characterised ideal Si (111) and Si(100) surfaces is discussed in numerous studies. Modern methods of the analysis of surface such as thermodesorption, 98 low-energy electron diffraction, 98,100,101 secondary-ion mass spectrometry, 102 scanning tunnelling microscopy, 103 ± 108 reflection high-energy electron diffraction 109 ± 111 are used in these investigations.…”

Section: Dissociative Adsorption Of Silanes On the Ideal Surface Of S...mentioning

confidence: 99%

“…185 ± 187, 189, 192 This peak is associated with the elimination of hydrogen from the monohydride groups. 183, 185 ± 189 In relation to the interpretation of the peaks in the evolution spectra of hydrogen, it is worthwhile to note the investigations into the thermal desorption of hydrogen from the (111) and (100) faces of silicon single crystal 113, 195 ± 202 and from the surface of porous crystalline sample. 202 It was found 198,202 that the desorption of hydrogen from di-and trihydride groups occurs at 640 ± 715 K, while from monohydride groups, at 720 ± 820 K.…”

Section: The Composition Of the Solid Productmentioning

confidence: 99%

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Mechanism of thermal decomposition of silanes

Onischuk¹,

Panfilov²

2001

Russ. Chem. Rev.

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Section: Dissociative Adsorption Of Silanes On the Ideal Surface Of S...mentioning

confidence: 99%

Section: The Composition Of the Solid Productmentioning

confidence: 99%

Mechanism of thermal decomposition of silanes

Onischuk¹,

Panfilov²

2001

Russ. Chem. Rev.

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“…44 In this case, the growth rate is determined by a balance between abstraction, desorption, and adsorption of hydrogen on the surface of the substrate. All of these effects are temperature dependent while the abstraction and adsorption of hydrogen are also hydrogen dilution dependent.…”

Section: Discussionmentioning

confidence: 99%

Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

2006

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We investigate the low-temperature growth of crystalline thin silicon films: epitaxial, twinned, and polycrystalline, by hot-wire chemical vapor deposition ͑HWCVD͒. Using Raman spectroscopy, spectroscopic ellipsometry, and atomic force microscopy, we find the relationship between surface roughness evolution and ͑i͒ the substrate temperature ͑230-350°C͒ and ͑ii͒ the hydrogen dilution ratio ͑H 2 / SiH 4 =0-480͒. The absolute silicon film thickness for fully crystalline films is found to be the most important parameter in determining surface roughness, hydrogen being the second most important. Higher hydrogen dilution increases the surface roughness as expected. However, surface roughness increases with increasing substrate-temperature, in contrast to previous studies of crystalline Si growth. We suggest that the temperature-dependent roughness evolution is due to the role of hydrogen during the HWCVD process, which in this high hydrogen dilution regime allows for epitaxial growth on the rms roughest films through a kinetic growth regime of shadow-dominated etch and desorption and redeposition of growth species.

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“…Other papers give insight into the nature of heterogeneous elementary stages on the well-characterized ideal surfaces like Si(111) and Si (100). These investigations use such ultrahigh vacuum methods of surface analysis as temperature-programmed desorption (TPS) [31,32], low-energy electron diffraction (LEED) [31,33,34], secondary ion mass spectrometry (SIMS) [35], scanning tunneling microscopy (STM) [36][37][38][39][40], reflection high-energy electron diffraction (RHEED) [32,41,42]. The methods provided a major breakthrough in the present understanding of the mechanism of heterogeneous reactions on ideal surfaces.…”

Section: Introductionmentioning

confidence: 99%

EPR investigation of a-Si:H aerosol particles formed under silane thermal decomposition

et al. 1998

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The dangling bond defects were investigated in a-Si:H particles formed under silane thermal decomposition in flow reactor. EPR together with hydrogen evolution method were used. The experimental results allowed us to conclude that there are two kinds of dangling bond defects in aSi:H aerosol particles. The defects of the first kind are localized on the surface of interconnected microvoids and microchannels (surface dangling bonds) and those of the second kind are embedded in amorphous silicon network (volume dangling bonds). The thermal equilibration of dangling bonds and temperature dependence of equilibrium dangling bond concentration were investigated. It was found that at temperatures >400 K the dangling bond concentration N reversibly depends on sample temperature. The volume dangling bond concentration increases with temperature increasing (the effective activation energy of dangling bond formation U> 0), and the surface dangling bond concentration decreases with temperature increasing (U < 0). It has been found that EPR line is considerably asymmetric for samples with high hydrogen content and for low hydrogen content the EPR line is weakly asymmetric. A conclusion was drawn that the asymmetry degree depends on amorphous silicon lattice distortions. This conclusion has been confirmed by EPR spectra simulations.

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Evidence for non-hydrogen desorption limited growth of Si from disilane at very low temperatures in gas source molecular beam epitaxy?

Cited by 15 publications

References 19 publications

Mechanism of thermal decomposition of silanes

Mechanism of thermal decomposition of silanes

Surface evolution during crystalline silicon film growth by low-temperature hot-wire chemical vapor deposition on silicon substrates

EPR investigation of a-Si:H aerosol particles formed under silane thermal decomposition

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