Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry

Schwitter, Bryan K.; Parker, Anthony E.; Fattorini, Anthony P.; Mahon, Simon J.; Heimlich, Michael

doi:10.1109/ted.2013.2278704

Cited by 26 publications

(8 citation statements)

References 21 publications

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“…Good values of IRR are also achieved with more stages. However, in this project, the GaAs technology has been considered because it is a high reliability process with low losses in the microwave region and a low cost process respect Silicon process especially for relatively small volume production [15][16][17][18]. The GaAs APPF proposed in this paper has the same performances in terms of covered bandwidth, insertion loss, matching and IIR, but it has many advantages compared to CMOS APPF mentioned above; it can be developed for working at higher frequencies thanks first to GaAs which has less parasitic capacitances and higher charge carriers drift velocity [19][20][21].…”

Section: The Polyphase Filter Solutionmentioning

confidence: 99%

Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands

Leggieri

Passi

Gagliesi

et al. 2015

J. Microw. Optoelectron. Electromagn. Appl.

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Section: The Polyphase Filter Solutionmentioning

confidence: 99%

Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands

Leggieri

Passi

Gagliesi

et al. 2015

J. Microw. Optoelectron. Electromagn. Appl.

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“…A combination of these techniques (e.g., step response via micro-Raman thermometry) has also been employed [19]. Particular temperature-sensitive electrical parameters (TSEP), such as the forward voltage drop between gate and source [20], the channel ON-resistance [20], [21], and the gate metal resistance [22], [23], have also been used to extract the thermal resistance of HEMTs (the thermal impedance in the case of measuring the gate resistance variation in the frequency/time domain [24]). However, their use is limited by the appearance of trapping effects (due to negatively pulsed drain current) [21] and the necessity of ad hoc designed thermal test structures [22]- [24].…”

Section: Introductionmentioning

confidence: 99%

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

González

Lázaro

Rodríguez

2022

IEEE Trans. Electron Devices

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In this article, an ac conductance method has been successfully employed to extract the thermal resistance of GaN-based high-electron-mobility transistors (HEMTs) on silicon. The resulting thermal resistances, when varying the channel length and gate width, are comparable to those obtained with pulsed measurements, by making use of positive drain-to-source pulsed voltages from a zero power dissipation quiescent bias point and 3-D thermal simulations. Furthermore, the gate geometry dependence of the thermal resistance of GaN-based HEMTs has been successfully modeled for circuit-design purposes.

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“…This will be possible for the IGBT junction temperature exaction, which is the basis of the health management system of power devices in the future. Commonly used TSEPs include the saturated collector-emitter voltage (V CEsat ) [17], [18], short-circuit current (I SC ) [19], gate-emitter voltage (V ge ) [20] gate resistance (R g ) [21], miller plateau time and miller plateau voltage (t gp , V gp ) [22], [23], the rate of change of collector-emitter voltage (du CE /dt)' [24]. the rate of change of collector current (di C /dt) [25], turn-on/turn-on delay time (t don /t doff ) [26], [27] and so on.…”

Section: Introductionmentioning

confidence: 99%

A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction

Shao

2022

IEEE J. Electron Devices Soc.

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Temperature-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature (T j ) extraction and prediction of power semiconductor devices. In this paper, the turn-off loss (E off ) and turn-off time (t off ) are presented as temperature-sensitive electrical parameters. The abrupt change in the junction temperature of Insulated Gate Bipolar Transistor (IGBT) occurs during switching is proved. Common deficiencies in a single temperature-sensitive electrical parameter were considered, including the necessity of the collector currents exaction, the poor junction detection accuracy. Therefore, after the linear relationship between junction temperature and turn-off time, and turn-off loss is proved, a hybrid model based on turn-off loss (E off ) and turn-off time (t off ) is proposed to extract junction temperature accurately. The experimental results show that the proposed method is with the advantages of high accuracy and strong anti-interference ability. Although some high-precision probes are required for parameter extraction, it indicates the internal mechanism of junction temperature mutation of the power device, and it is of great value for the reliability of the power devices that operate continuously.INDEX TERMS Insulated gate bipolar transistor (IGBT), online junction temperature extraction, turn-off delay time, turn-off loss.

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Study of Gate Junction Temperature in GaAs pHEMTs Using Gate Metal Resistance Thermometry

Cited by 26 publications

References 21 publications

Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands

Analysis and Design of a GaAs Monolithic Tunable Polyphase Filter in S/C Bands

RF Extraction of Thermal Resistance for GaN HEMTs on Silicon

A Hybrid Model of Turn-Off Loss and Turn-Off Time for Junction Temperature Extraction

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