Study of G-S/D underlap for enhanced analog performance and RF/circuit analysis of UTB InAs-OI-Si MOSFET using NQS small signal model

Maity, Subir Kumar; Pandit, Soumya

doi:10.1016/j.spmi.2016.11.053

Cited by 8 publications

(2 citation statements)

References 31 publications

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“…In [34,35], we know that the lifetime of the non-equilibrium carrier can be calculated by the experiment of measuring the change of the concentration of the non-equilibrium carrier. According to the Heisenberg uncertainty principle [36], when the product of its lifetime and energy needs to be greater than the Heisenberg constant, a non-equilibrium carrier to have an effect in a semiconductor, as follows:…”

Section: The Limit Small Voltage Signal Theorymentioning

confidence: 99%

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

Huang

Miao

et al. 2021

Sensors

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This paper presents a minimum signal model via the AC small-signal model and the uncertainty principle, which reveals the minimum AC signal that can be amplified by a bipolar transistor. The Ebers—Moll model (EM3) can describe the small signal amplification process, but it is difficult to define the minimum amplifiable signal of the bipolar transistor. In this study, the correspondence relationship between the non-equilibrium carrier and the electric injection is proved, and the relationship between the life of the non-equilibrium carrier and the measurable signal is proposed by the uncertainty principle. Next, the limit of perceived minimum voltage is also derived in this paper. Then, combining with EM3 model, the minimum AC signal model of bipolar transistor is presented to calculate the minimum voltage signal of bipolar transistor that can be amplified. Finally, a number of the simulation and experiment results show that when the minimum signal in the model is used as input, the carrier concentration of the bipolar transistor does not change and the base electrode cannot perceive the signal, which verifies the validity of the minimum AC signal model.

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Section: The Limit Small Voltage Signal Theorymentioning

confidence: 99%

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

Huang

Miao

et al. 2021

Sensors

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“…In [11], the effect of channel scaling on drain current and transconductance of III-V quantum well FET is reported. The effect of gate underlap on the device and circuit performance is reported in [12]. The effect of buried oxide scaling on the device and circuit performance is reported in [13].…”

Section: Introductionmentioning

confidence: 99%

Device-circuit analysis of ultra-thin body In_1−xGa_xAs on insulator MOS transistor with varying indium mole fraction and channel thickness

Maity

Pandit

2022

Eng. Res. Express

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In this paper, with the help of a well-calibrated simulation study, we explore the design space of ultra-thin body In1−xGaxAs-on-Insulator MOS transistor. We have studied the effect of Indium content, and channel thickness on carrier mobility, different analog figure of merits such as transconductance, transconductance generation factor, output conductance, and intrinsic gain of UTB III-V on Insulator MOS transistor. Moreover, we have analyzed the RF performance of the device in terms of unity gain cut-off frequency and maximum oscillation frequency. To verify frequency response characteristics and DC transfer characteristics, the circuit implementation of the UTB III-V on Insulator MOS transistor was performed on a cascode amplifier and differential amplifier. Our result shows that while increasing channel thickness and Indium content, the carrier transport property of the device improves. With an increase in channel thickness and Indium content, a significant improvement in carrier mobility is observed. Due to the poor electrostatic integrity, off-state current of the device increases with channel thickness and Indium content. Due to enhanced transport property, drain current, transconductance, unity gain cut-off frequency, and maximum oscillation frequency also improve. The improvement in analog and RF Figure of Merits are also reflected in circuit performance.

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Analysis of scaling of thickness of the buffer layer on analog/RF and circuit performance of InAs‐OI‐Si MOSFET using NQS model

Maity

Pandit

2019

Int J Numerical Modelling

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With use of III‐V material in the channel region of a metal‐oxide‐semiconductor (MOS) transistor, interface buffer layers above and below the channel region are necessary to reduce several sources of scattering of the inversion charge carriers. This work presents a detailed analysis of effect of scaling down thickness of the top buffer layer of a buffered InAs‐OI‐Si metal‐oxide‐semiconductor field effect transistor (MOSFET) on electrostatic integrity, carrier mobility, analog/RF, linearity, and circuit performance using well‐calibrated 2D technology computer‐aided design simulation. We further develop non–quasi‐static small‐signal equivalent circuit model of the device. The model results have been compared with experimental results and good accuracy of our model is demonstrated. Both the model and numerical simulation results have been used in our study. In‐depth analysis of behaviour of several performance parameters at DC and radio frequency (RF) is presented with analytical explanations and numerical simulation results. A common source amplifier is designed and simulated in SPICE framework using the equivalent circuit model. From the study, we find that the quantum well that is formed in the buffer/channel/buffer layers needs to be formed as near to the oxide/semiconductor interface as possible for optimum performance.

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Study of G-S/D underlap for enhanced analog performance and RF/circuit analysis of UTB InAs-OI-Si MOSFET using NQS small signal model

Cited by 8 publications

References 31 publications

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

Device-circuit analysis of ultra-thin body In_1−xGa_xAs on insulator MOS transistor with varying indium mole fraction and channel thickness

Analysis of scaling of thickness of the buffer layer on analog/RF and circuit performance of InAs‐OI‐Si MOSFET using NQS model

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Study of G-S/D underlap for enhanced analog performance and RF/circuit analysis of UTB InAs-OI-Si MOSFET using NQS small signal model

Cited by 8 publications

References 31 publications

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

The Minimum AC Signal Model of Bipolar Transistor in Amplification Region for Weak Signal Detection

Device-circuit analysis of ultra-thin body In1−x Ga x As on insulator MOS transistor with varying indium mole fraction and channel thickness

Analysis of scaling of thickness of the buffer layer on analog/RF and circuit performance of InAs‐OI‐Si MOSFET using NQS model

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Device-circuit analysis of ultra-thin body In_1−xGa_xAs on insulator MOS transistor with varying indium mole fraction and channel thickness