Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Kim, Beom Yong; Kim, Baek Su; Hyun, Seung Dam; Kim, Ho; Lee, Yong Bin; Park, Hyun Woo; Park, Min Hyuk; Hwang, Cheol Seong

doi:10.1063/5.0011663

Cited by 22 publications

(10 citation statements)

References 25 publications

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“…Numerous studies conducted in several research groups in the last decade have demonstrated that fluorite‐structure ferroelectrics can be deposited using various deposition techniques such as ALD, sputtering, pulsed laser deposition (PLD), chemical vapor deposition (CVD), and chemical solution deposition (CSD). [ 1–19,22–54 ] Among these techniques, ALD was the most intensively studied deposition technique because it can form very thin conformal and uniform ferroelectric films based on a self‐limiting mechanism by chemical reactions between metal precursors, oxygen source, and the previously deposited film (or substrate). In this regard, the only controllable parameters during the ALD process are types of metal precursor/oxygen sources, [ 27–29 ] pulse/purge time, [ 30,31 ] and deposition temperature.…”

Section: Deposition Methods For Low‐thermal‐budget Ferroelectric Filmsmentioning

confidence: 99%

“…[ 2,4,47 ] Moreover, it was found that ferroelectric properties, especially endurance, can be further improved by the deposition method of the TiN bottom electrode: >10 10 cycles in ALD TiN and ≈10 9 cycles in sputtered TiN at a pulse amplitude of 2.5 MV cm −1 . [ 54 ] However, to apply these MFM structures directly to electronic device applications, it should be integrated in BEOL rather than FEOL, so a low‐temperature process (<400 °C) is essential (see Figure 2).…”

Section: Substrate Materials For Low‐thermal‐budget Ferroelectric Fil...mentioning

confidence: 99%

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Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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Since the first report on the unexpected ferroelectricity of fluorite-structure oxides in 2011, this topic has provided a pathway for new research directions and opportunities. Based on theoretical calculations and experimental demonstrations, it is now well known that fluorite-structure ferroelectrics are compatible with complementary metal-oxide-semiconductor technology and exhibit ferroelectric properties at extremely thin (<10 nm) thicknesses. It should be noted that the noncentrosymmetric orthorhombic phase, which is responsible for ferroelectric behavior, is formed even at low temperatures (400 C or less). Herein, the various factors such as doping effects, deposition method, annealing method and conditions, and substrate material are reviewed, focusing on thermal budget, especially the low-temperature annealing process for formation of the ferroelectric phase. These low-thermal-budget processes facilitate not only the integration of ferroelectric circuits in the back-end-of-line to increase the effective memory area and add more functionalities but also applications for flexible and wearable electronics.

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Section: Deposition Methods For Low‐thermal‐budget Ferroelectric Filmsmentioning

confidence: 99%

Section: Substrate Materials For Low‐thermal‐budget Ferroelectric Fil...mentioning

confidence: 99%

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Kim

Jung

et al. 2021

Physica Rapid Research Ltrs

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“…The negative ( E c – ) and positive ( E c + ) coercive field values are −0.95 and 1.6 MV/cm, respectively. The shift in the I sw – E curves indicates the presence of the negative internal electric field in the structure, which is usually attributed to the nonequivalent top and bottom electrode/ferroelectric interface. An internal electric field can be calculated as −(| E c + | – | E c – |)/2, which gives the value of ≈−0.33 MV/cm for 400 °C RTA.…”

Section: Resultsmentioning

confidence: 99%

“…The shift in the I sw – E curves indicates the presence of the negative internal electric field in the structure, which is usually attributed to the nonequivalent top and bottom electrode/ferroelectric interface. An internal electric field can be calculated as −(| E c + | – | E c – |)/2, which gives the value of ≈−0.33 MV/cm for 400 °C RTA. Qualitatively similar asymmetries of the I sw – E curves are observed after elevated RTA temperatures, with the E c – and E c + values being −0.9 and 1.5 MV/cm and −1 and 1.35 MV/cm for 500 and 600 °C RTA devices, respectively.…”

Section: Resultsmentioning

confidence: 99%

Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf_0.5Zr_0.5O₂/TiN Capacitors

Khakimov

Chernikova

Lebedinskiǐ

et al. 2021

ACS Appl. Electron. Mater.

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The retention and endurance properties of TiN/Hf0.5Zr0.5O2/TiN ferroelectric memory capacitors are systematically investigated for their dependence on the temperature of the postmetallization annealing applied for the Hf0.5Zr0.5O2 crystallization and applied electric field. The increase of the annealing temperature from 400 to 600 °C affects the retention loss behavior dramatically, inducing the valuable retention improvement. A simultaneous decrease of the imprint shift indicates the primary role of imprint in the retention behavior of TiN/Hf0.5Zr0.5O2/TiN stacks. On the contrary, the rise of annealing temperature worsened the endurance of TiN/Hf0.5Zr0.5O2/TiN stacks. The latter observation is attributed to the increase of leakage currents related to the rise in the concentration of the shallow (0.1–0.2 eV) defects. X-ray photoelectron spectroscopy measurements revealed the increase of the energy potential for the electrons at the bottom Hf0.5Zr0.5O2/TiN interface with the increase of the annealing temperature, which explains the less probable charge injection during the polarization storage at elevated temperatures and consequently lower imprint underlying the retention improvement. Similarly, the rise of the applied electric field can decrease the imprint shift and improve retention valuably. However, the application of the higher electric field dramatically worsens the device’s endurance. This work clarifies the critical role of the chemical and electrical properties of the ferroelectric/electrode interfaces in the retention behavior and points to their evolution with different annealing conditions. Moreover, it shows that for any annealing conditions the fine-tuning of the applied electric field is necessary to achieve the trade-off between satisfactory retention and endurance in TiN/Hf0.5Zr0.5O2/TiN stacks.

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“…To achieve this, the deposition of the ferroelectric layer plays a crucial role in the formation of the desired o-phase. The evolution of the phase is dependent on a number of factors, such as the type of dopants, , film thickness, annealing parameters, type of substrates, − strain in the film, and deposition method. , Most previous studies considered industrially viable atomic layer deposition (ALD) . Some studies have demonstrated chemical solution deposition (CSD), which allows the deposition of uniform and ultrathin films from gaseous precursors, injected in cycles.…”

Section: Introductionmentioning

confidence: 99%

Expeditiously Crystallized Pure Orthorhombic-Hf_0.5Zr_0.5O₂ for Negative Capacitance Field Effect Transistors

Cho

Pujar

Choi

et al. 2021

ACS Appl. Mater. Interfaces

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Ultralow-power logic devices are next-generation electronics in which their maximum efficacies are realized at minimum input power expenses. The integration of ferroelectric negative capacitors in the regular gate stacks of two-dimensional field-effect transistors addresses two intriguing challenges in today's electronics; short channel effects and high operating voltages. The complementary-metal-oxide-semiconductor-compatible Hf 0.5 Zr 0.5 O 2 (HZO) is an excellent ferroelectric material crystallized in a noncentrosymmetric o-phase. The present work is the first to utilize pulsed laser deposition (PLD)-grown phase-pure ferroelectric HZO to achieve steep slope negative capacitance (NC) in field effect transistors (FETs). A dual-step growth strategy is designed to achieve phase-pure orthorhombic HZO on silicon and other conducting substrates. The room-temperature PLD-grown amorphous HZO is allowed to crystallize using rapid thermal annealing at 600 °C. The polycrystalline orthorhombic HZO is further integrated with atomic layer deposition-grown HfO 2 to achieve a stable NC transition. The stack is further integrated into the molybdenum disulfide channel to achieve steep switching and a hysteresis-free operation of the resulting FETs. The subthreshold swings of the FETs are 20.42 and 26.16 mV/dec in forward and reverse bias conditions, respectively.

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Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Cited by 22 publications

References 25 publications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf_0.5Zr_0.5O₂/TiN Capacitors

Expeditiously Crystallized Pure Orthorhombic-Hf_0.5Zr_0.5O₂ for Negative Capacitance Field Effect Transistors

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Study of ferroelectric characteristics of Hf0.5Zr0.5O2 thin films grown on sputtered or atomic-layer-deposited TiN bottom electrodes

Cited by 22 publications

References 25 publications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Low‐Thermal‐Budget Fluorite‐Structure Ferroelectrics for Future Electronic Device Applications

Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf0.5Zr0.5O2/TiN Capacitors

Expeditiously Crystallized Pure Orthorhombic-Hf0.5Zr0.5O2 for Negative Capacitance Field Effect Transistors

Contact Info

Product

Resources

About

Influence of the Annealing Temperature and Applied Electric Field on the Reliability of TiN/Hf_0.5Zr_0.5O₂/TiN Capacitors

Expeditiously Crystallized Pure Orthorhombic-Hf_0.5Zr_0.5O₂ for Negative Capacitance Field Effect Transistors