“…In detail, when an excess electron passes through the semiconductor, the self-trapping phenomenon will happen (i.e., the formation of a small polaron, see Supplementary Note in Supplementary Information) and cause sluggish charge transportation, 39,40 which accounts for the poor electrical conductivity in 2H-MoS 2 . 41 Meanwhile, Goodenough and other researchers also suggested that symmetry-breaking states introduced by defects or insertions will induce polaron preemption (or polaron collapse), thus electron transportation can be accelerated. 42,43 For instance, spin-polarized electrons (i.e., typical symmetry-breaking states) are recently observed in monolayer MoS 2 , which owns a better electrical conductivity than the bulk phase.…”