Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Razali, Nurul Syuhadah Mohd; Rahim, Alhan Farhanah Abd; Radzali, Rosfariza; Mahmood, Ainorkhilah

doi:10.1063/1.5002455

Cited by 3 publications

(2 citation statements)

References 5 publications

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“…However, thermal treatment of the DPSi layer undergoes significant morphological changes, converting small pores into larger ones and simultaneously generating tensile strain, as already reported in our previous study [9]. The morphological changes that DPSi undergoes are crucial in semiconductor fabrication processes, such as epitaxial layer transfer [15][16][17][18][19], making it an excellent alternative and a promising candidate for fabricating electronic devices and solar cells [20][21][22].…”

Section: Introductionsupporting

confidence: 63%

Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon

Gouder,

Mahamdi,

Guiza

et al. 2023

RCMA

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Previous investigations into SiGe alloys using Raman spectroscopy have generated significant uncertainties regarding the relationships between shifts in Raman peak frequencies and stress. Furthermore, these studies did not establish precise correlations when examining alloys on porous substrates. These substrates have emerged as promising candidates in the highly competitive field of adaptable substrates for epitaxial growth of heterogeneous systems (such as III-V, SiGe, etc.) on Silicon (Si). Among these porous materials, double porous silicon (DPSi) has recently garnered attention, featuring a low porosity upper layer atop a buried high porosity layer. However, during a heat treatment, the upper low-porosity layer transforms into a quasi-monocrystalline Si layer, making it suitable for high-quality epitaxial growth. In this work, we present the first investigation of the vibrational properties of the Si1-xGex membranes grown on top of annealed DPSi, using Raman spectroscopy. We systematically propose new relationships linking the Raman peak shift to Ge concentration and strain, using a set of experimental equations derived from the peak positions of the Si-Si, Si-Ge, and Ge-Ge modes.

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Section: Introductionsupporting

confidence: 63%

Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon

Gouder,

Mahamdi,

Guiza

et al. 2023

RCMA

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“…Since the 1990s, research interest in Porous Silicon ( p -Si) has grown considerably, following reports that showed photoluminescence in the visible range 1 , 2 . Soon thereafter, research into this sponge-like material exploded as it seemingly offered new directions for the development of a wide range of optical and electro-optical applications such as optical interference filters 3 , solar panel enhancers 4 , all-optical modulator for far-IR 5 , multilayer periodic structure with photonic gap 6 , electroluminescence material 7 , Mach-Zehnder interferometer based sensors 8 , and optical biosensors 9 .…”

Section: Introductionmentioning

confidence: 99%

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

Yurkevich

et al. 2018

Sci Rep

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We performed interferometric time-resolved simultaneous reflectance and transmittance measurements to investigate the carrier dynamics in pump-probe experiments on thin porous silicon membranes. The experimental data was analysed by using a method built on the Wentzel-Kramers-Brillouin approximation and the Drude model, allowing us to reconstruct the excited carriers’ non-uniform distribution in space and its evolution in time. The analysis revealed that the carrier dynamics in porous silicon, with ~50% porosity and native oxide chemistry, is governed by the Shockley-Read-Hall recombination process with a characteristic time constant of 375 picoseconds, whereas diffusion makes an insignificant contribution as it is suppressed by the high rate of scattering.

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Size, porosity, and surface-termination dependence of the radiative and nonradiative relaxation processes of porous silicon

Arad-Vosk

Yakov

Sa’ar

2020

Journal of Applied Physics

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The role of porosity and surface-termination on the radiative and the nonradiative relaxation processes of luminescent porous silicon is investigated using temperature-dependent, time-resolved photoluminescence spectroscopy. We show that, for porous silicon having low- to mid-porosity, radiative relaxation times should be associated with the quantum confinement of excitons (the confined photo-excited electron–hole pairs), while nonradiative relaxation processes are related to the state of the surface (e.g., the surface chemistry), in agreement with previous reports. However, for high-porosity films of porous silicon, we have found much faster low-temperature relaxation times, which are associated with radiative transitions from the triplet excitonic state. This state becomes partially allowed due to a strong coupling and mixing with the singlet state in high-porosity films of porous silicon containing fairly small silicon nanocrystallites.

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Study of double porous silicon surfaces for enhancement of silicon solar cell performance

Cited by 3 publications

References 5 publications

Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon

Vibrational Properties and Raman Peak Shift Relationships in Si1−xGex Epilayers Grown on Annealed Double Porous Silicon

Reconstructing charge-carrier dynamics in porous silicon membranes from time-resolved interferometric measurements

Size, porosity, and surface-termination dependence of the radiative and nonradiative relaxation processes of porous silicon

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