Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Harding, Ruth E.; Davies, Gordon; Coleman, P. G.; Burrows, C. P.; Wong‐Leung, Jennifer

doi:10.1016/j.physb.2003.09.152

Cited by 8 publications

(12 citation statements)

References 9 publications

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“…Due to the competing effect of nonradiative and radiative processes in iondamaged Si, relative peak intensities cannot be used as a measure of the defect concentration. However, X band seems to anneal out at much higher temperature (B500 C) than the W band as reported by Harding et al [6]. In accordance with the previous studies, X band is attributed to I 4 clusters [7] whereas W band is attributed to I 3 clusters in Si [8].…”

Section: Methodssupporting

confidence: 89%

Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon

Giri¹

2003

Physica B: Condensed Matter

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Section: Methodssupporting

confidence: 89%

Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon

Giri¹

2003

Physica B: Condensed Matter

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“…The centers responsible for these lines are present in ion-implanted [5,6,7,8,9] as well as in high energy electron-and proton-irradiated c-Si [10,11]. As W and X centers are generated during irradiation processes, they coexists with a large variety of defects which makes their identification through experiments difficult.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…As the W line intensity diminishes in PL spectra, the X line raises and reaches maximum intensity after annealing in the range 400−500 • C and vanishes upon annealing at ∼ 600 • C [5,6,8]. The temperature regime at which their presence is maximized along with the fact that their intensity decreases as the damage concentration increases suggest that defects responsible for these lines should be of small size [7,8]. It is widely accepted that the W and X centers are of interstitial nature since their intensity is modified when there are self-interstitial traps (B, C) [5,9] whereas it is practically unaffected by the presence of vacancy traps (O) [9].…”

Section: Introductionmentioning

confidence: 99%

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Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Santos¹,

Aboy²,

López³

et al. 2016

J. Phys. D: Appl. Phys.

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Abstract.We have used atomistic simulations to identify and characterize interstitial defect cluster configurations candidates to W and X photoluminescence centers in crystalline Si. The configurational landscape of small self-interstitial defect clusters has been explored through nanosecond annealing and implantation recoil simulations using classical molecular dynamics. Among the large collection of defect configurations obtained, we have selected those defects with the trigonal symmetry of the W center, and the tetrahedral and tetragonal symmetry of the X center. These defect configurations have been characterized using ab initio simulations in terms of their donor levels, their local vibrational modes, the defect induced modifications of the electronic band structure, and the transition amplitudes at band edges. We have found that the so called I 3 -V is the most likely candidate for W PL center. It has a donor level and local vibrational modes in better agreement with experiments, a lower formation energy, and stronger transition amplitudes than the so called I 3 -I, which was previously proposed as W center. With respect to defect candidates to X PL center, our calculations have shown that none of analyzed defect candidates match all of the experimental characteristics of the X center. Although the Arai tetra-interstitial configuration previously proposed as X center cannot be excluded, the other defect candidates to X center found, I 3 -C and I 3 -X, cannot either being discarded.

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“…The X‐centre (or I 3) is another optically active interstitial‐related defect centre. It has a zero‐phonon emission line at 1193 nm and is thought to consist of four interstitial silicon atoms 18, 19.…”

Section: Introductionmentioning

confidence: 99%

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

McCallum

Villis

Johnson

et al. 2010

Physica Status Solidi (a)

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The presence of boron in silicon has been shown to have a deleterious effect on the luminescence of interstitial‐related centres, particularly the W‐centre which is often observed after ion implantation and a low temperature anneal. Competition between silicon‐interstitial and boron‐interstitial centre formation is considered to be a possible mechanism underlying this dramatic reduction. Previous work on silicon implantation of boron‐doped substrates is extended to examine the effect of B implantation itself on W‐centre formation. W centres formed via the implantation of B and a low temperature anneal and via a Si implant over an activated B‐implant profile followed by low temperature anneal are compared. These studies contrast the effects of boron and silicon implantation and examine the effect of overlapping implantation profiles. Studying the effect of boron on optical centre formation provides insight into defect interactions in silicon and new data for theoretical modelling.

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Study of defects in ion-implanted silicon using photoluminescence and positron annihilation

Cited by 8 publications

References 9 publications

Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon

Photoluminescence study of self-interstitial clusters and extended defects in ion-implanted silicon

Insights on the atomistic origin of X and W photoluminescence lines inc-Si fromab initiosimulations

Effect of boron on formation of interstitial‐related luminescence centres in ion implanted silicon

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