Study of De-protection Reactions for Chemically Amplified Resists

Sekiguchi, Atsushi; Kono, Yoshiyuki; Sensu, Yoshihisa

doi:10.2494/photopolymer.16.209

Cited by 13 publications

(9 citation statements)

References 15 publications

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“…The deprotection reaction rate constant K dp was obtained from the fitting method of the experiment data according to the following equations. 12) [P] = Exp (-K dp [H + ] m t)…”

Section: Deprotection Reaction Analysismentioning

confidence: 99%

“…This observation was consistent with previous reports about the deprotection reactions of typical chemical amplification resists. 12,[15][16][17][18][19] The activation energy E amp in the low PEB temperature region and the activation energy E diff in the high PEB temperature region were obtained from each the slope of the plots as shown the dotted lines and the solid lines in Fig. 5 Table III.…”

Section: Deprotection Reaction Analysis Of Methyl Acetal Resistmentioning

confidence: 99%

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Characteristics of low E a 193-nm chemical amplification resists

Ogata¹,

Kinoshita²,

Furuya³

et al. 2006

SPIE Proceedings

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Polymers with methyl acetal ester moiety in the side chain as acid labile protecting group were synthesized and their thermal property, plasma stability and chemical amplification (CA) positive-tone resist characteristics were investigated. 2-Admantyloxymethyl (AdOM) groups in the copolymer indicated lower glass transition temperatures and higher thermal decomposition temperatures than those of 2-methyl-2-admantyl (MAd) groups in the copolymer. AdOM polymer film showed smooth surface roughness after Ar plasma exposure compared with MAd polymer film due to the high thermal stability. The activation energies (E a ) of these deprotection reactions were calculated from Arrhenius plots of these deprotection reaction rate constants. In the low post exposure bake (PEB) temperature region, the E a of these resists decreased in the order MAd > AdOM. The low E a methyl acetal resists displayed good thermal flow resist characteristics for contact holes printing. In addition, the low E a methyl acetal resist achieved a wide exposure latitude of 8.1 % and depth of focus of 400 nm for printing 80 nm 1:1 dense line pattern using NSR-306C (NA 0.78, 2/3 annular). Furthermore, the 65 nm 1:1 dense lines using ASML XT1400 (NA 0.93, C-Quad) for low E a methyl acetal resist pattern showed no tapered and no footing profiles and small roughness on the lines pattern sidewall was observed. 1, INTRODUCTION193 nm lithography including immersion lithography is drawing attention as the successor of optical lithography for the technology nodes of 65 nm, 45 nm, and possibly even beyond 32 nm. 1,2) Therefore, there has been many researches for the base polymer and monomer materials for 193 nm CA positive-tone resists. It is generally known that a suitable protecting group plays an important role in obtaining a good lithographic performance for CA positivetone resist. 3) In our previous work we reported effects of the newly bulky methyl acetal ester as acid labile protecting group on resist characteristics of methacrylate polymers and the relationship between the protecting group structure and deprotection reaction mechanism. 4-6) These results suggest that the newly bulky methyl acetal ester protecting group is effective for further controlling good lithographic performance such as exposure sensitivity, line-edge roughness and PEB sensitivity due to the lower E a compared with tertiary alkyl ester protecting group. However, the relationship between the methyl acetal ester protecting group structure and thermal property of copolymer was not fully discussed. In recent years many papers on low E a CA resist and thermal property of 193 nm CA resists have been reported for the purpose of applying immersion lithography process, thermal flow process and plasma cure process. [7][8][9][10][11] In this paper we report thermal property, plasma stability, deprotection reaction mechanism and high lithographic performance for low E a methyl acetal resist. 2, EXPERIMENT Materials2-Methyl-2-adamantyl methacrylate (M) and γ-butyrolactone-2-yl methacrylate (G) we...

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“…The deprotection reaction rate constant K dp was obtained from the fitting method of the experiment data according to the following equations. 12) [P] = Exp (-K dp [H + ] m t)…”

Section: Deprotection Reaction Analysismentioning

confidence: 99%

Section: Deprotection Reaction Analysis Of Methyl Acetal Resistmentioning

confidence: 99%

Characteristics of low E a 193-nm chemical amplification resists

Ogata¹,

Kinoshita²,

Furuya³

et al. 2006

SPIE Proceedings

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“…In the near future, resist manufacturers will likely be required to attach documents regarding outgassing to their products at the time of shipment. In our earlier studies, we tried to establish methods for evaluating outgassing from KrF resists during KrF (248 nm) exposure [2,3]. This paper examines an approach to evaluating outgassing from ArF chemically-amplified resists during ArF exposure, with a special focus on sulfate ions (SO 4 2-) derived from PAG, which exceeded the estimated specification values in our previous report, based on the outgas analytical techniques that we have built up to date.…”

Section: Introductionmentioning

confidence: 99%

Study of Outgassing from the ArF CA Resist During ArF (193 nm) Exposure

Minami

Matsumoto

Sekiguchi

et al. 2019

J. Photopol. Sci. Technol.

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In recent years, we have seen growing numbers of reports on problems associated with outgas generated from resists during ArF exposure, including contaminating of the exposure equipment lens. Scanner manufacturers have apparently begun taking countermeasuresfor example, establishing criteria for outgas generated by resists during exposure. In the near future, resist manufacturers will likely be required to attach documents regarding outgassing to their products at the time of shipment. In our earlier studies, we tried to establish methods for evaluating outgassing from KrF resists during KrF (248 nm) exposure. This paper examines an approach to evaluating outgassing from ArF chemically-amplified resists during ArF exposure, with a special focus on sulfate ions (SO4 2-) derived from PAG, based on the outgas analytical techniques that we have built up to date. We used ion chromatography (IC) as the method of analysis.

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“…Since six-mirror exposure optics now represents the mainstream, we installed a resist evaluation system [1] capable of obtaining reflectance spectra of these exposure optics at the BL3 beamline in the NewSUBARU [2] synchrotron radiation facility and performed resist evaluations. The system allows evaluations of various parameters for lithography simulations, including exposure sensitivity, [3] acid diffusion length, [4] light desorption characteristics, [5] Dill's ABC parameters, [6] and quenching rate parameters. [7] Using the top coat method, we examined the diffusion behavior of the acid generated by the PAG.…”

mentioning

confidence: 99%

A Study of Acid Diffusion Behaviors of PAG by using Top Coat Method for EUVL

Sekiguchi

Watanabe

Kinoshita

2014

J. Photopol. Sci. Technol.

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Semiconductor microfabrication technologies for the 22-nm generation require high-performance resists with superb exposure characteristics. Specifically, this means resolution, exposure sensitivity, and edge roughness values not exceeding 18 nm, 10 mJ/cm 2 , and 2 nm (3), respectively. Resist exposure characteristics must be evaluated using actual exposure spectra. Since six-mirror exposure optics now represents the mainstream, we installed a resist evaluation system [1] capable of obtaining reflectance spectra of these exposure optics at the BL3 beamline in the NewSUBARU [2] synchrotron radiation facility and performed resist evaluations. The system allows evaluations of various parameters for lithography simulations, including exposure sensitivity, [3] acid diffusion length, [4] light desorption characteristics, [5] Dill's ABC parameters, [6] and quenching rate parameters. [7] Using the top coat method, we examined the diffusion behavior of the acid generated by the PAG. This paper reports the results of our study.

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Study of De-protection Reactions for Chemically Amplified Resists

Cited by 13 publications

References 15 publications

Characteristics of low E a 193-nm chemical amplification resists

Characteristics of low E a 193-nm chemical amplification resists

Study of Outgassing from the ArF CA Resist During ArF (193 nm) Exposure

A Study of Acid Diffusion Behaviors of PAG by using Top Coat Method for EUVL

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