Study of Cu diffusion behavior in low dielectric constant SiOC(–H) films deposited by plasma-enhanced chemical vapor deposition

Choi, Chi Kyu; Lee, Heang Seuk; Navamathavan, R.; Woo, Jiwon; Kim, Chang Young

doi:10.1016/j.tsf.2010.02.050

Cited by 9 publications

(4 citation statements)

References 20 publications

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“…Cu easily penetrates into porous low-k dielectrics under thermal or electrical stress. The drifted Cu ion can induce permanent bond displacement and catalyze the bond breakage reaction in the dielectric film, resulting in degraded electrical characteristics and reliability [24,25]. The formation SAMs on the highly porous low-k dielectrics by APTMS treatment was stressed at different electric-fields at 25 • C for various times to evaluate its Cu barrier efficiency.…”

Section: Resultsmentioning

confidence: 99%

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

et al. 2019

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Highly porous low-dielectric-constant (low-k) dielectric materials with a dielectric constant (k) less than 2.50 are needed for 32 nm and beyond technological nodes. In this study, a highly porous low-k dielectric film with a k value of 2.25, open porosity of 32.0%, and pore diameter of 1.15 nm were treated by 3-Aminopropyltrimethoxysilane (APTMS) in wet solution in order to form self-assembled monolayers (SAMs) onto it. The effects of the formation SAMs on the electrical characteristics and reliability of highly porous low-k dielectric films were characterized. As SAMs were formed onto the highly porous low-k dielectric film by APTMS treatment, the dielectric breakdown field and the failure time were significantly improved, but at the expense of the increases in the dielectric constant and leakage current. Moreover, the formation SAMs enhanced the Cu barrier performance for highly porous low-k dielectric films. Therefore, the SAMs derived from APTMS treatment are promising for highly porous low-k dielectric films to ensure better integrity.

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Section: Resultsmentioning

confidence: 99%

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

et al. 2019

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“…Porous low-k dielectric films with the dielectric constant less than 2.8 are widely used in ultra large-scale integrated chips for 45 nm or below technology nodes to reduce the signal propagation delay and power consumption [1][2]. The porous low-k dielectric film integrated into the advanced back-end-of-line (BEOL) interconnects would face a serious reliability concern because of a weaker dielectric strength for porous low-k dielectric film and a higher sustained electrical-field for continuously scaled-down geometric sizes [3].…”

Section: Introductionmentioning

confidence: 99%

Effect of Cu Drift on Dielectric Breakdown for Porous Low Dielectric Constant Film under Static and Dynamic Stress

et al. 2016

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Cu-ion-migration-induced the porous low-k dielectric breakdown was studied in alternating polarity-bias conditions using a metal–insulator–metal (MIM) capacitor with Cu as a top metal electrode. The experimental results indicated that Cu ions migrate into a dielectric film under a positive polarity stress, leading to a shorter time to failure (TTF). Additionally, the TTF obtained in the alternating-polarity test increased with decreasing the stressing frequency, indicating that the backward migration of Cu ions during the reverse-bias stress. When the frequency is decreased to 10-2 Hz, the measured TTFs were higher as compared to a direct-current (DC) stress condition. Under Cu-ion-recovery case, the electric-field acceleration factor for porous low-k dielectric film breakdown tends to increase. Meanwhile, this Cu backward migration effect is effective as the stressing time in the negative polarity is larger than 0.1 s.

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“…7,8 In addition, it has been shown by multiple studies that metal species can migrate into the low-k matrix and catalyze failure. [9][10][11][12][13][14] A variety of mechanisms contribute to generate dielectric breakdown. Most of these failure mechanisms can be classified into two groups; intrinsic failure, which is primarily driven by the transport of electronic charge carriers, and metal induced failure, resulting from the drift of ions into the low-k matrix.…”

Section: Introductionmentioning

confidence: 99%

Current leakage relaxation and charge trapping in ultra-porous low-k materials

Borja

Plawsky

et al. 2014

Journal of Applied Physics

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Role of copper in time dependent dielectric breakdown of porous organo-silicate glass low-k materials Appl. Phys. Lett. 99, 222110 (2011); 10.1063/1.3664405 Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass J. Vac. Sci. Technol. A 29, 030602 (2011); 10.1116/1.3570818 Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k -porous organosilicate dielectricsTime dependent dielectric failure has become a pivotal aspect of interconnect design as industry pursues integration of sub-22 nm process-technology nodes. Literature has provided key information about the role played by individual species such as electrons, holes, ions, and neutral impurity atoms. However, no mechanism has been shown to describe how such species interact and influence failure. Current leakage relaxation in low-k dielectrics was studied using bipolar field experiments to gain insight into how charge carrier flow becomes impeded by defects within the dielectric matrix. Leakage current decay was correlated to injection and trapping of electrons. We show that current relaxation upon inversion of the applied field can be described by the stretched exponential function. The kinetics of charge trapping events are consistent with a time-dependent reaction rate constant, k ¼ k 0 Á ðt þ 1Þ bÀ1 , where 0 < b < 1. Such dynamics have previously been observed in studies of charge trapping reactions in amorphous solids by W. H. Hamill and K. Funabashi, Phys. Rev. B 16, 5523-5527 (1977). We explain the relaxation process in charge trapping events by introducing a nonlinear charge trapping model. This model provides a description on the manner in which the transport of mobile defects affects the long-tail current relaxation processes in low-k films. V C 2014 AIP Publishing LLC. [http://dx.

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Study of Cu diffusion behavior in low dielectric constant SiOC(–H) films deposited by plasma-enhanced chemical vapor deposition

Cited by 9 publications

References 20 publications

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

Effect of Cu Drift on Dielectric Breakdown for Porous Low Dielectric Constant Film under Static and Dynamic Stress

Current leakage relaxation and charge trapping in ultra-porous low-k materials

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