Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

Cheng, Yi-Lung; Haung, Chiao-Wei; Lee, Chih-Yen; Chen, Giin-Shan; Fang, Jau–Shiung

doi:10.3390/coatings9040246

Cited by 9 publications

(12 citation statements)

References 32 publications

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“…APTMS-SAMs are frequently used for surface modification, barrier layer, or adhesion promotion, ,,,, although SAMs derived from other related molecules, such as 3-aminopropydimethylethoxysilane and 3-aminopropyldiethoxymethylsilane, are occasionally used. An APTMS molecule has three hydrolyzable methoxy (−OCH 3 ) groups, so a polar solvent readily dissolves APTMS molecules and tends to enhance monolayer growth because of the polar nature of APTMS molecules .…”

Section: Resultsmentioning

confidence: 99%

“…Advanced microelectronic devices also require an ultrathin barrier layer with a thickness less than 2 nm . Thus, SAMs have been receiving much attention as the barrier layer of Cu metallization. ,, Moreover, SAM barriers could also serve as a pore sealant for p-SiOCH. ,, However, silanization of p-SiOCH for the growth of a highly ordered monolayer barrier (or pore sealant) has not been well explored. , …”

Section: Introductionmentioning

confidence: 99%

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Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments

et al. 2020

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Amine-terminated self-assembled monolayers are molecular nanolayers, typically formed via wet-chemical solution on specific substrates for precision surface engineering or interface modification. However, homogeneous assembling of a highly ordered monolayer by the facile, wet method is rather tricky because it involves process parameters, such as solvent type, molecular concentration, soaking time and temperature, and humidity level. Here, we select 3-aminopropyltrimethoxysilane (APTMS) as a model molecule of aminosilane for the silanization of nanoporous carbon-doped organosilicate (p-SiOCH) under tightly controlled process environments. Surface mean roughness (R a) and the water contact angle (θ) of the p-SiOCH layers upon silanization at a 10% humidity-controlled environment behave similarly and follow a three-stage evolution: a leap to a maximum at 15 min for R a (from 0.227 to 0.411 nm) and θ (from 25 to 86°), followed by a gradual decrease to 0.225 nm and 69o, finally leveling off at the above values (>60 min). The −NH3 + fraction indicating monolayer disorientation evolves in a similar fashion. The fully grown monolayer is highly oriented yielding an unprecedented low −NH3 + fraction of 0.08 (and 0.92 of upright −NH2 groups). However, while having a similar thickness of approximately 1.4 ± 0.1 nm, the molecular layers grown at 30% relative humidity exhibit a significantly elevated −NH3 + fraction of 0.42, indicating that controlling the humidity is vital to the fabrication of highly oriented APTMS molecular layers. A bonding-structure evolution model, as distinct from those offered previously, is proposed and discussed.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments

et al. 2020

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“…For -SH and -NH 2 terminal groups, a bonding was formed with Cu films, thereby enhancing the adhesion. 18,19 Among three SAMs precursors with -CH 3 terminal group, HTEOS−SAMs provided the better adhesion, while HMDS-SAMs had the worse result. In case of HMDS-SAMs sample, its terminal group is tri-methyl, rather than mono-methyl, which further deteriorates the adhesion with Cu.…”

Section: Resultsmentioning

confidence: 99%

Comparison of Precursors for Self-Assembled Monolayers as Cu Barriers

Cheng¹,

Lee²,

Chen³

et al. 2023

ECS J. Solid State Sci. Technol.

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Self-assembled monolayers (SAMs) are emerging material candidates for barriers for application in back-end-of–line interconnects in advanced generation. In this study, SAMs derived from organic molecules with different structures are compared in terms of electrical characteristics, Cu diffusion inhibition, and Cu–SiO2 adhesion promotion. Experimental results indicated that all SAMs formed in this study enhance the breakdown filed of SiO2 film, promote Cu–SiO2 adhesion, and prevent Cu-silicate formation under thermal annealing. Among the studied SAMs, APTMS-SAM derived from 3-aminopropyltrimethoxysilane (APTMS) has the most pronounced enhancement. Moreover, APTMS-SAM blocks Cu migration under electrical stress. The terminal group -NH2 attached to Cu layer in the APTMS is the key in the improvement.

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“…For instance, during the fabrication of low-k thin films, large and interconnected pores result in observable plasma-induced damages that cause charges to build up and ultimately increase the leakage current 14 . Furthermore, porous low-k dielectrics with interconnected pores have poor mechanical properties, which complicates their incorporation into microchips 15 . Another challenge in low-k dielectric thin films is the open-to-surface pore network, which will allow moisture and other contaminants to enter the porous network, degrading the k-value.…”

Section: Introductionmentioning

confidence: 99%

Millisecond flash lamp curing for porosity generation in thin films

Attallah,

Prucnal,

Buttering

et al. 2023

Sci Rep

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Flash lamp annealing (FLA) with millisecond pulse durations is reported as a novel curing method for pore precursor's degradation in thin films. A case study on the curing of dielectric thin films is presented. FLA-cured films are being investigated by means of positron annihilation spectroscopy (PAS) and Fourier-transform infrared (FTIR) spectroscopy in order to quantify the nm-scale porosity and post-treatment chemistry, respectively. Results from positron annihilation reveal the onset of the formation of porous voids inside the samples at 6 ms flash treatment time. Moreover, parameter's adjustment (flash duration and energy density) allows for identifying the optimum conditions of effective curing. Within such a systematic investigation, positron results indicate that FLA is able to decompose the porogen (pore precursors) and to generate interconnected (open porosity) or isolated pore networks with self-sealed pores in a controllable way. Furthermore, FTIR results demonstrate the structural evolution after FLA, that help for setting the optimal annealing conditions whereby only a residual amount of porogen remains and at the same time a well-densified matrix, and a hydrophobic porous structures are created. Raman spectroscopy suggests that the curing-induced self-sealing layer developed at the film surface is a graphene oxide-like layer, which could serve as the outside sealing of the pore network from intrusions.

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Self-Assembled Monolayers on Highly Porous Low-k Dielectrics by 3-Aminopropyltrimethoxysilane Treatment

Cited by 9 publications

References 32 publications

Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments

Chemical-Structure Evolution Model for the Self-Assembling of Amine-Terminated Monolayers on Nanoporous Carbon-Doped Organosilicate in Tightly Controlled Environments

Comparison of Precursors for Self-Assembled Monolayers as Cu Barriers

Millisecond flash lamp curing for porosity generation in thin films

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