Study of charge loss mechanisms for nano-sized localized trapping SONOS memory devices

Multi-level 2-bit/cell operation utilizing Hf-based metal/oxide/nitride/oxide/silicon nonvolatile memory with HfO2 and HfON tunneling layer

“…15,21,36) Therefore, the lateral redistribution of charges takes an important role in programmed data retention. 36,37) The reported lateral charge spread effect in the SONOS device shows 83% data retention at 10 4 s after programming/erasing cycles of 10 4 at room temperature. 37) In our experiments, both devices show 84% data retention at 10 4 s for programmed states.…”

“…36,37) The reported lateral charge spread effect in the SONOS device shows 83% data retention at 10 4 s after programming/erasing cycles of 10 4 at room temperature. 37) In our experiments, both devices show 84% data retention at 10 4 s for programmed states. Therefore, the V PGM /t PGM of 5-6 V/1-2 ms with a V DS of 1-1.5 V and read voltage of 1.5 V utilized in this experiment efficiently suppressed the lateral spread effect and screen out the localized trapped charges in the HfN 1.1 layer.…”

“…Therefore, the V PGM /t PGM of 5-6 V/1-2 ms with a V DS of 1-1.5 V and read voltage of 1.5 V utilized in this experiment efficiently suppressed the lateral spread effect and screen out the localized trapped charges in the HfN 1.1 layer. 36,37) In other words, the unique feature of 2-bit/cell operation is achieved by localized charge trapping of HfN 1.1 , and the nonconducting property of the charge storage material by setting the measurement conditions. 36,37) Figure 6 shows the gate size dependence on V TH and V ON characteristics of four states to investigate the effect of localized trap on I D -V G characteristics of the Hf-based MONOS device with HfO 2 TL.…”

“…36,37) In other words, the unique feature of 2-bit/cell operation is achieved by localized charge trapping of HfN 1.1 , and the nonconducting property of the charge storage material by setting the measurement conditions. 36,37) Figure 6 shows the gate size dependence on V TH and V ON characteristics of four states to investigate the effect of localized trap on I D -V G characteristics of the Hf-based MONOS device with HfO 2 TL. We measured 10 different devices to plot the error bar.…”