Study of Basic Effects of HPM Pulses in Digital CMOS Integrated Circuit Inputs

Holloway, Michael; Dilli, Z.; Seekhao, Nuttiiya; Rodgers, J.

doi:10.1109/temc.2012.2188720

Cited by 17 publications

(4 citation statements)

References 15 publications

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“…Because of their own saturation mechanism, these protections were thought to bring some extra protection against HPM that one must quantify. However, it was shown that an HPM excitation having a sufficiently large voltage amplitude can induce -through ESD protections -a significant DC voltage at the input pin of a CMOS IC, which finally leads to a change of the logic state at its output [12]. Unfortunately, this study does not propose any physical understanding on the underlying mechanisms affecting the circuit via interference.…”

Section: Introductionmentioning

confidence: 85%

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Control of a Mos Inverter by Out-of-Band Pulsed Microwave Excitation

Pouant

Raoult

Hoffmann

et al. 2017

PIER M

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Abstract-An intentional focusing of High-Power Microwave (HPM) energy on microelectronic systems can produce effects that will potentially upset or damage the target. However, the physical mechanisms at work within the device are not often well understood. We provide a detailed understanding of the physical mechanisms involved in a common-source Metal Oxide Semiconductor (MOS) transistor inverter when Pulsed Microwave Excitation (PME) in a frequency range from 10 MHz to 1 GHz is applied on the gate terminal. Our study is based on the measurements of the current waveforms on all transistor access and explains the MOS response with and without the Radio-Frequency (RF) interference.

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Section: Introductionmentioning

confidence: 85%

“…The most recent research efforts were focused on circuits including electrostatic discharge (ESD) protection and stressed by HPM [12]. Because of their own saturation mechanism, these protections were thought to bring some extra protection against HPM that one must quantify.…”

Section: Introductionmentioning

confidence: 99%

Control of a Mos Inverter by Out-of-Band Pulsed Microwave Excitation

Pouant

Raoult

Hoffmann

et al. 2017

PIER M

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“…The analysis of electromagnetic compatibility (EMC) is frequently carried out to keep a system or components of a system working properly [1,2]. For example, components of a microelectronic system should work normally and not interfere with others at the same time.…”

Section: Introductionmentioning

confidence: 99%

Low-Frequency Transmitted Fields of a Source Inside a Magnetic Shell with Large Conductivity

2022

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The method to evaluate the transmitted fields of a source inside a simply connected magnetic shell with large but finite conductivity at low frequencies is proposed in this paper. When modeling the magnetic shell with large conductivity, it is regarded as a penetrable object. Electric field integral equation (EFIE) is selected for the exterior region problem and magnetic field integral equation (MFIE) is chosen for the interior region problem. Each operator is decomposed with loop-star functions to overcome the problem of low-frequency breakdown. Numerical results verify the accuracy of the proposed method.

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“…), thereby affecting normal operation of the whole circuit system [1,2,3,4,5]. In recent years, several experimental and theoretical researches about HPM interference effect of ICs have been carried out [6,7,8,9]. In terms of CMOS circuits and devices.…”

Section: Introductionmentioning

confidence: 99%

Upset and damage mechanisms of the three-dimensional silicon device induced by high power microwave interference

Chai

Liu

et al. 2019

IEICE Electron. Express

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The paper clearly reveals the mechanism of upset (bit error) and damage caused by high power microwave (HPM) interference for the three-dimensional silicon device. The 0.35 µm process related three-dimensional model of two stages cascaded CMOS inverters is established for the first time utilizing semiconductor device simulator Sentaurus-TCAD to comprehendingly study the HPM interference mechanism. Moreover, a detailed mechanism about the upset induced by HPM interference is performed. Furthermore, the process and mechanism of damage generated by HPM interference are explored by using this model. The dependences of the damage power threshold P and damage energy threshold E on the pulsewidth τ are both in negative exponential relationship. The simulation results in this paper have a good coincidence with the experimental results.

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Study of Basic Effects of HPM Pulses in Digital CMOS Integrated Circuit Inputs

Cited by 17 publications

References 15 publications

Control of a Mos Inverter by Out-of-Band Pulsed Microwave Excitation

Control of a Mos Inverter by Out-of-Band Pulsed Microwave Excitation

Low-Frequency Transmitted Fields of a Source Inside a Magnetic Shell with Large Conductivity

Upset and damage mechanisms of the three-dimensional silicon device induced by high power microwave interference

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