Abstract-An intentional focusing of High-Power Microwave (HPM) energy on microelectronic systems can produce effects that will potentially upset or damage the target. However, the physical mechanisms at work within the device are not often well understood. We provide a detailed understanding of the physical mechanisms involved in a common-source Metal Oxide Semiconductor (MOS) transistor inverter when Pulsed Microwave Excitation (PME) in a frequency range from 10 MHz to 1 GHz is applied on the gate terminal. Our study is based on the measurements of the current waveforms on all transistor access and explains the MOS response with and without the Radio-Frequency (RF) interference.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.