Study of Barrier Structures on the Base of Nickel Phthalocyanine Thin Films During the Interaction with the Ammonia Medium

Cherpak, Vladyslav; Stakhira, Pavlo; Kuntyy, O. I.; Zakutayev, Andriy

doi:10.1080/15421400802451568

Cited by 6 publications

(7 citation statements)

References 20 publications

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“…It is well known that the structure and morphology of phthalocyanine thin films can strongly influence their gas sensing characteristics. 24,25 It is reported that metal phthalocyanine in a-phase has higher sensitivity to gaseous media as compared to other polymorphs and that is why we have also used the a-phase of ZnPc thin film as gas sensing purpose. 24,25 In addition to the heterojunction devices, studies on single layer devices like ITO/ZnS/Al and ITO/ ZnPc/Al were performed for comparison.…”

Section: Introductionmentioning

confidence: 99%

Nanostructured organic–inorganic heterojunction diodes as gas sensors

et al. 2012

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Nanostructured organic-inorganic heterojunction devices were fabricated by employing n-type zinc sulphide (ZnS) grown on ITO by RF magnetron sputtering and thin film of zinc phthalocyanine (ZnPc) deposited on the top of the ZnS layer by thermal evaporation. On the top of the ZnPc layer, an Al film was coated to form an electrode. Thin films of ZnS and ZnPc were characterized by optical absorption and Field Emission Scanning Electron Microscopy (FESEM). Current-voltage (I-V) characteristics of the fabricated ITO/ZnS/ZnPc/Al hetero-structures were studied at different temperatures (30 to 90 uC) in vacuum and diode-like behaviour was observed. In the case of single layer devices ITO/ZnS/Al and ITO/ZnPc/Al diode-like behavior was not obtained. The effects of donor ammonia and acceptor oxygen gases on the electrical properties of single layer devices ITO/ ZnS/Al, ITO/ZnPc/Al and ITO/ZnS/ZnPc/Al heterojunctions were studied in order to investigate the utility of these devices as gas sensors. A drastic increase in forward current of the heterojunction has been noticed in the presence of donor ammonia gas containing water vapor, while a decrease in forward current has been noticed in the presence of acceptor oxygen gas. This change in forward current (diode current) in the presence of gases (under doped conditions) has been explained by the creation of charge carriers inside the ZnPc layer and hence bending of ZnPc bands. The threshold voltage (V th ) of the junction diodes has been found to depend on the temperature and the presence of donor and acceptor gases. Our experimental results suggest that this heterojunction diode could be a novel candidate for gas sensors.

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Section: Introductionmentioning

confidence: 99%

Nanostructured organic–inorganic heterojunction diodes as gas sensors

et al. 2012

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“…Therefore, the observed rectification takes place at the NiPc/ZnO heterojunction. It is obvious that concentration of charge carriers by oxygen doping in NiPc can reach values higher than the concentration in ZnO [10,11]. Due to the fact that the ZnO film thickness is nanodimensional, the preliminary calculations based on [19] show that the width of the space charge region completely covers it, which leads to a complete depletion of charge carriers in ZnO.…”

Section: Resultsmentioning

confidence: 99%

“…Detailed description of the evaporation procedure is given in Refs. [9,10]. For coating with ZnO we used the ALD method, which was recently demonstrated as a suitable technique for the construction of range of the hybrid organic material/ZnO structures for applications in electronic, optoelectronics and photovoltaics [7][8][9]11].…”

Section: Methodsmentioning

confidence: 99%

Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis

Stakhira¹,

Grygorchak²,

Cherpak³

et al. 2010

Materials Science and Engineering: B

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“…Murata et al concluded that photocurrent in ITO/ porphyrin/Al cells originates from irradiationassisted oxidation (photocorrosion) of aluminum contact [2,16]. In our earlier works [12,15,17] we observed generation of output electrical power in the dark when the cells incorporating a metal phthalocyanine/aluminum barrier where exposed to chemically active environments. It was assigned to electrochemical reactions involving metallic cathode and its oxide components.…”

Section: Introductionmentioning

confidence: 94%

“…More detailed description of the cell manufacturing process can be found in Refs. [17,19,20]. Immediately after fabrication, the cells were transferred to a measuring chamber.…”

Section: Methodsmentioning

confidence: 99%

Quantitative Rapid Identification of Antigens and Antibodies

Джелалі¹

2013

SEMST

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Abstract. Current density-vs-voltage characteristics and frequency dependences of impedance were analyzed for sandwich cells ITO/NiPc/Metal, where ITO is a transparent conducting double indiumtin oxide, NiPc is a thermally evaporated nickel phthalocyanine thin film, and Metal is aluminum or indium top electrode. After testing in dry air, these cells were exposed to saturated water vapors, or mixed water/ammonia vapors with different pressures. Comparative analysis of the data taken from DC and AC measurements in the dark was carried out. Contributions of the NiPc film bulk and the NiPc/ Metal interfacial region to conducting properties of the cells were elucidated. Impedance of the cells in various environments was interpreted using equivalent circuits, and the time scales for relaxation processes in NiPc films were thus estimated.

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Study of Barrier Structures on the Base of Nickel Phthalocyanine Thin Films During the Interaction with the Ammonia Medium

Cited by 6 publications

References 20 publications

Nanostructured organic–inorganic heterojunction diodes as gas sensors

Nanostructured organic–inorganic heterojunction diodes as gas sensors

Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis

Quantitative Rapid Identification of Antigens and Antibodies

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