Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis

Stakhira, Pavlo; Grygorchak, I. I.; Cherpak, Vladyslav; Ivastchyshyn, Fedir O.; Volynyuk, D.; Luka, G.; Godlewski, M.; Guziewicz, E.; Pakhomov, Georgy L.; Hotra, Zenon

doi:10.1016/j.mseb.2010.05.029

Cited by 10 publications

(8 citation statements)

References 24 publications

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“…More detailed description of the cell manufacturing process can be found in Refs. [17,19,20]. Immediately after fabrication, the cells were transferred to a measuring chamber.…”

Section: Methodsmentioning

confidence: 99%

“…The Nyquist plots of ITO/NiPc/In cells in all environments are composed of two well-shaped semicircles [19,25] -Fig. 7a-d.…”

Section: Ito/nipc/in Cellsmentioning

confidence: 99%

“…is responsible for hopping conductivity between localized states near the Fermi level in NiPc [19]. Introduction of ammonia vapors modifies the equivalent circuits for ITO/NiPc/Al cells, especially at low frequencies - Fig.…”

Section: Parameters Of Dark DC Plotsmentioning

confidence: 99%

“…However, more reliable information can be inferred from the time (frequency)-resolved techniques, such as alternant current (AC) or impedance spectroscopy [18][19][20][21]. This work describes a comparative analysis of DC and AC response of the phthalocyanine based sandwich cells under steady-state action of water or mixed water/ammonia vapors.…”

Section: Introductionmentioning

confidence: 99%

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Quantitative Rapid Identification of Antigens and Antibodies

Джелалі¹

2013

SEMST

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Abstract. Current density-vs-voltage characteristics and frequency dependences of impedance were analyzed for sandwich cells ITO/NiPc/Metal, where ITO is a transparent conducting double indiumtin oxide, NiPc is a thermally evaporated nickel phthalocyanine thin film, and Metal is aluminum or indium top electrode. After testing in dry air, these cells were exposed to saturated water vapors, or mixed water/ammonia vapors with different pressures. Comparative analysis of the data taken from DC and AC measurements in the dark was carried out. Contributions of the NiPc film bulk and the NiPc/ Metal interfacial region to conducting properties of the cells were elucidated. Impedance of the cells in various environments was interpreted using equivalent circuits, and the time scales for relaxation processes in NiPc films were thus estimated.

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“…More detailed description of the cell manufacturing process can be found in Refs. [17,19,20]. Immediately after fabrication, the cells were transferred to a measuring chamber.…”

Section: Methodsmentioning

confidence: 99%

“…The Nyquist plots of ITO/NiPc/In cells in all environments are composed of two well-shaped semicircles [19,25] -Fig. 7a-d.…”

Section: Ito/nipc/in Cellsmentioning

confidence: 99%

Section: Parameters Of Dark DC Plotsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Quantitative Rapid Identification of Antigens and Antibodies

Джелалі¹

2013

SEMST

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“…93 There are reports of reasonable and improved stability with devices incorporating ALD ZnO layers. 176 ZnO can suffer degradation in the long term. ALD ZnO layers exposed to damp-heat have been seen to undergo a several orders of reduction in mobility along with a slight reduction in carrier concentration, attributed to diffusion of gases along grain boundaries and the creation of crystal defects which act as traps and recombination centres.…”

Section: Multilayersmentioning

confidence: 99%

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Burgess

2017

Materials Science and Technology

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Atomic layer deposition (ALD) is an increasingly popular thin film deposition technique which offers unique large area capability combined with excellent conformality, thus ALD will likely be important in the development of next generation optoelectronic devices. Such device platforms include solar cells, thin film transistors and light emitting diodes, and in all of these technologies one material is frequently used – zinc oxide (ZnO) – owing to its excellent electrical and optical properties combined with earth abundance. The approaches and achievements in tailoring the properties of ALD ZnO are discussed. Key process variables include deposition temperature and purge times as well dopant incorporation, with particular attention paid to tuning band alignment and carrier concentrations (focusing on lower carrier concentration applications). This review was submitted as part of the 2016 Materials Literature Review Prize of the Institute of Materials, Minerals and Mining run by the Editorial Board of MST. Sponsorship of the prize by TWI Ltd is gratefully acknowledged.

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Phthalocyanine and Porphyrin Films on Glass Substrates—Processing, Properties, and Applications

Popanda

Środa²

2023

Advances in Glass Research

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Long time stability of ITO/NiPc/ZnO/Al devices with ZnO buffer layer formed by atomic layer deposition technique–impedance spectroscopy analysis

Cited by 10 publications

References 24 publications

Quantitative Rapid Identification of Antigens and Antibodies

Quantitative Rapid Identification of Antigens and Antibodies

Review of tailoring ZnO for optoelectronics through atomic layer deposition experimental variables

Phthalocyanine and Porphyrin Films on Glass Substrates—Processing, Properties, and Applications

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