Study of barrier inhomogeneities using I–V–T characteristics of Mo/4H–SiC Schottky diode

Ouennoughi, Z.; Toumi, Samir; Weiß, Roland

doi:10.1016/j.physb.2014.08.031

Cited by 36 publications

(26 citation statements)

References 40 publications

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“…It was also observed earlier for alpha-particle irradiated devices [31]. These deviations are due to the presence of inhomogeneities at the interface (such as surface defects and inhomogeneity in doping concentration) [20,[33][34][35][36][37][45][46][47]. There was little noticeable change in the ideality factors and SBH at temperature 120 K and above, for before and after irradiation.…”

Section: I-v Characteristicssupporting

confidence: 60%

“…It could be deduced from Table 1 that the SBH I-V decrease and the ideality factor increase, with decreasing in temperature [33][34][35][36][37]. It was also observed that SBHs I-V decrease and the ideality factors increase after HEE…”

Section: I-v Characteristicsmentioning

confidence: 99%

“…The temperature dependent behaviour of n and SBH predicted an inhomogeneous barrier height and deviation from thermionic emission and diffusion theory as shown in Fig. 4 [20,34,37,47]. Barrier height can be determined in another way by re-writing Eq.…”

Section: The Richardson Plotmentioning

confidence: 99%

“…The experimental values of A* before and after irradiation were estimated from the intercept of the plot to be 4. [34,36,37,49,50], which indicate that the active area was smaller than the device area [47], and the effect of barrier inhomogeneity [8]. The mean barrier heights for both were deduced from the slope of the insert plot in Fig.…”

Section: The Richardson Plotmentioning

confidence: 99%

“…5 to be 1.41 and 1.30 eV. It has been reported earlier by many researchers that the deviation of the Richardson constants from theoretical value may be as a result of the effect of the barrier inhomogeneity at the MS interface and some other factors such as crystal defects and potential fluctuation [8,31,34,47]. Since the deviation cannot be explained by the thermionic emission diffusion model, the Gaussian distribution model of barrier height has been used.…”

Section: The Richardson Plotmentioning

confidence: 99%

See 4 more Smart Citations

The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes

Omotoso

Meyer

Auret

et al. 2015

Materials Science in Semiconductor Processing

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The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H-SiC samples of doping density 7.1 × 10 15 cm -3 has been investigated over the temperature range 40-300 K. Currentvoltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6 × 10 14 electrons-cm -2 . For both devices, the I-V characteristics were well described by thermionic emission (TE) in the temperature range 120 -300 K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8 × 10 15 to 6.8 × 10 15 cm -3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 Acm −2 K −2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.

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