Study of an atmospheric pressure glow discharge (APG) for thin film deposition

Foest, Rüdiger; Adler, F.; Sigeneger, F.; Schmidt, Martin

doi:10.1016/s0257-8972(02)00487-5

Cited by 88 publications

(50 citation statements)

References 8 publications

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“…Recently plasma deposition at atmospheric pressure has become a promising technology due to its economical and ecological advantages. Sawada et al [4] reported the organosilicon thin films deposition in APGD in helium with the admixture of tetraethoxysilane (TEOS) or HMDSO and oxygen, Prat et al [5] reported fluoro-polymer film deposition in helium APGD with admixture of hexafluoropropylene or tetrafluoroethylene, Gherardi et al [6] used N 2 -SiH 4 -N 2 O APTD for SiO 2 deposition, Foest et al [7] used APGD in helium with an admixture of HMDSO for organosilicon thin film deposition. Starostine et al [8] reported the silica-like coating deposition in APGD in argon, nitrogen, oxygen and HMDSO gas mixture.…”

Section: Introductionmentioning

confidence: 99%

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Trunec¹,

Zajı́čková²,

Buršı́ková³

et al. 2010

J. Phys. D: Appl. Phys.

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To cite this version:DAbstract. The atmospheric pressure dielectric barrier discharge burning in nitrogen with small admixture of hexamethyldisiloxane (HMDSO) was used for the deposition of thin organosilicon films. The thin films were deposited on glass, silicon and polycarbonate substrates, the substrate temperature during the deposition process was elevated up to values within the range 25 • C -150 • C in order to obtain hard SiO x -like thin films. The properties of the discharge were studied by means of optical emission spectroscopy and electrical measurements. The deposited films were characterised by Rutherford backscattering and elastic recoil detection methods, x-ray photoelectron spectroscopy, infrared spectroscopy measurements, ellipsometry and depth sensing indentation technique. It was found that the films properties depend significantly on substrate temperature at deposition. An increase of substrate temperature from 25 • C to 150 • C leads to an increase of film hardness from 0.4 GPa to 7 GPa and the film chemical composition changes from CH x Si y O z to SiO x H y . The films were transparent in visible range.

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Section: Introductionmentioning

confidence: 99%

Deposition of hard thin films from HMDSO in atmospheric pressure dielectric barrier discharge

Trunec¹,

Zajı́čková²,

Buršı́ková³

et al. 2010

J. Phys. D: Appl. Phys.

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“…Several types of nonequilibrium, atmospheric-pressure plasma sources have been successfully used for depositing SiO 2 films onto substrate surfaces. These include atmospheric-pressure (AP) dielectric barrier discharge (DBD) [1][2][3][4] as the most commonly used atmospheric-pressure discharge, AP plasma jet, [5,6] and AP plasma CVD (AP-PCVD). [7,8] However, most of them have used helium (He) as the working gas to generate the plasma.…”

Section: Introductionmentioning

confidence: 99%

A Nonequilibrium, Atmospheric‐Pressure Argon Plasma Torch for Deposition of Thin Silicon Dioxide Films

Kasih

Kuroda

Kubota

2007

Chemical Vapor Deposition

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A nonequilibrium, atmospheric-pressure plasma torch that can be generated either in He or Ar gas by using a pulsed highvoltage power supply with the discharge temperature in the range 22-35°C has been developed. This system is used to deposit silicon dioxide films from a hexamethyldisiloxane (HMDSO) precursor diluted in an oxygen carrier gas. It is concluded that, in terms of both quality and deposition rate at the same applied power, frequency, and gas composition, Ar plasma is more powerful than He plasma for depositing SiO 2 -like films. The maximum feed rate of HMDSO/O 2 injected into the Ar plasma torch is limited to 100 mL min -1 to ensure inorganic coatings are deposited. In order to improve the visual quality, without adversely affecting the inorganic features of the film, a small amount of nitrogen (N 2 ) can be added to the Ar as a working gas. When the ratio of Ar to N 2 in the flow gas is 30:1, the discharge behavior is transformed from filamentary to glowlike as a result of the quenching effect of admixed N 2 on Ar plasma.

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“…In Table 1, we list a set of works (Ref [53][54][55][56][57][58][59][60][61][62][63][64][65][66][67][68][69][70][71][72] showing the various possibilities investigated to deposit thin films by low power sources. The common operational mode of atmospheric pressure DBD is filamentary (Ref 54,(57)(58)(59)(60)(61)(62)(63)(64)(65)(66)(67)71), resulting in strong spatial nonuniformity of plasma chemistry that can alter the quality of the films. On the contrary, glow DBD modes (Ref 53,55,56,(68)(69)(70)72), sometimes, referred to as low current atmospheric pressure Townsend-like discharge or high current atmospheric pressure glow-like discharge, are expected to give high quality films.…”

Section: Low Power Sourcesmentioning

confidence: 99%