Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift region

Abstract

This paper proposes a double epi-layers 4H-SiC junction barrier Schottky rectifier (JBSR) with embedded P layer (EPL) in the drift region. The structure is characterized by the P-type layer formed in the n-type drift layer by epitaxial overgrowth process. The electric field and potential distribution are changed due to the buried P-layer, resulting in a high breakdown voltage (BV) and low specific on-resistance (Ron,sp). The influences of device parameters, such as the depth of the embedded P+ regions, the space between them and the doping concentration of the drift region, etc., on BV and Ron,sp are investigated by simulations, which provides a particularly useful guideline for the optimal design of the device. The results indicate that BV is increased by 48.5% and Baliga's figure of merit (BFOM) is increased by 67.9% compared to a conventional 4H-SiC JBSR.

Influence of three-dimensional p-buried layer pattern on the performance of 4H-SiC floating junction Schottky barrier diode

“…The doping concentration of the substrate is 1 × 10 19 cm −3 . The physical models for SiC FJ-SBDs are based on previous works [19][20][21][22][23] and correspond to experimental data.…”