Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

Suppression of Oxide and Interface Charge Density in Radio Frequency Sputtered Ta2O5 Thin Films

“…[53] In addition, the lower Q ox indicates reduction of voids and saturation of dangling bonds which results in reduced leakage current. [54] Moreover, the maximum dielectric constant at 3:2 Ar/O 2 gas flow ratio can also be related to the minimum leakage current as reported elsewhere. [55,56] As mentioned above, at extreme gas flow ratios there exists unsaturated bonds due to the formation of nonstochiometric films.…”

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

“…In summary, among the pure high-κ oxides, Al2O3 thin films represent the bes promise, especially in combination with a very thin SiO2 interfacial layer. Some po Few other papers have been dedicated to thin films of simple high-κ oxides such as La 2 O 3 [59,60], Ta 2 O 5 [61], or TiO 2 [62], which, when directly grown on 4H-SiC, showed analogous results as in the case of simple HfO 2 oxide. Generally, they demonstrated good dielectric constant values, but their high interface state density and low breakdown voltages made them still far from possible implementation in real devices.…”

“…This latter is schematically depicted in Figure 4, showing that the presence of the OH species on the SiO2 surface favours the nucleation process by increasing the number of nucleation sites and the formation of denser Al2O3 films. Other high-κ oxides have been also grown on SiC substrates as thin amorphous films, such as HfO 2 [56][57][58], La 2 O 3 [59,60], Ta 2 O 5 [61], and TiO 2 [62]. Among these materials, HfO 2 thin films have been widely investigated because of their superior theoretical properties, such as much higher permittivity.…”

“…Nevertheless, after the annealing ment at 800 °C in N2, the nanolaminated stack showed an improvement of the die properties, since the dielectric constant value increased to 13.4 and the Not value dec to 1.15 × 10 12 cm −2 . Few other papers have been dedicated to thin films of simple high-κ oxides s La2O3 [59,60], Ta2O5 [61], or TiO2 [62], which, when directly grown on 4H-SiC, sh analogous results as in the case of simple HfO2 oxide. Generally, they demonstrated dielectric constant values, but their high interface state density and low breakdow ages made them still far from possible implementation in real devices.…”

Influence of Atomic Layer Deposition Temperature on the Electrical Properties of Al/ZrO2/SiO2/4H‐SiC Metal‐Oxide Semiconductor Structures

“…It is also known that deposition conditions like process temperature can affect the properties of dielectric thin films such as crystal or amorphous structure and alters gate stack properties . While there were several works on the properties of double gate dielectric stacks prepared using atomic layer deposition of high‐κ dielectrics like HfO 2 /SiO 2 , La 2 O 3 /SiO 2 , Al 2 O 3 /SiO 2 , Al 2 O 3 /SiO x N y , or Pr x O y /AlON on 4H‐SiC, there is no information about ZrO 2 /SiO 2 gate stacks and the influence of the deposition temperature on the electrical properties of double dielectrics stacks on 4H‐SiC although deposition temperature has significant influence on both structural and electrical properties of various ALD fabricated high‐κ dielectrics . In this work, we investigate the effect of deposition temperature on the electrical properties of atomic layer deposited (ALD) ZrO 2 /thermally oxidized SiO 2 gate stacks on 4H‐SiC.…”