Study HTHP Sintered WC/Co Hardmetal

Mashhadikarimi, Meysam; Gomes, Uílame Umbelino; Oliveira, Michel Picanço; Guimarães, Renan da Silva; Filgueira, Marcello

doi:10.1590/1980-5373-mr-2016-0471

Cited by 7 publications

(2 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Due to the growth of WC grains, the porosity of the CC structure then decreases. As shown in the study of (Mashhadikarimi et al , 2016) and (Zhou et al , 2015b), the relative density of CC structure increases with increasing sintering temperature. At higher sintering temperatures, a higher volume of the liquid phase is formed, which wets and penetrates among the WC grains, thus reducing the porosity of the CC structure.…”

Section: Resultsmentioning

confidence: 73%

The structure and the properties of WC-Co samples produced by SLM technology and carbon-doped prior to HIP processing

Bricín

Véle²,

Jansa³

et al. 2022

RPJ

View full text Add to dashboard Cite

Purpose The purpose of this study is to verify how the carbon doping of the WC-Co cemented carbide (CC) affected their structure before their processing by hot isostatic pressing (HIP) technology. Design/methodology/approach The samples for this experiment were fabricated by selective laser melting technology (SLM) using a YAG fiber laser with a power of P = 40 W and a scanning speed of 83 mm/s. The subsequent carbon doping process was performed in a chamber furnace at 900 0 C for 1, 4 and 12 h. The HIP was performed at 1,390°C and pressures of 40 MPa, 80 MPa and 120 MPa. The changes induced in the structures were evaluated using X-ray diffraction and various microscopic methods. Findings X-ray diffraction analysis showed that the structure of the samples after SLM consisted of WC, W2C, Co4W2C and Co phases. As a result of the increase in the carbon content in the structure of the samples, the transition carbide W2C and structural phase Co4W2C decayed. Their decay was manifested by the coarsening of the minor alpha phase (WC), which occurred both during the carburizing process and during the subsequent processing using HIP. In the samples in which the structure was carburized prior to HIP, only the structural phases WC and Co were observed in most cases. Originality/value The results confirm that it is possible to increase the homogeneity of the CC structure and thus its applicability in practice by additional carburization of the sample structure with subsequent processing by HIP technology.

show abstract

Section: Resultsmentioning

confidence: 73%

The structure and the properties of WC-Co samples produced by SLM technology and carbon-doped prior to HIP processing

Bricín

Véle²,

Jansa³

et al. 2022

RPJ

View full text Add to dashboard Cite

show abstract

“…The existing methods for preparing Dia/SiC composites include high-temperature and high-pressure (HTHP) sintering [ 9 , 10 ], precursor conversion [ 11 ], vacuum discharge plasma sintering [ 12 ], and hot isostatic pressing [ 8 , 13 ]. The application of hot isostatic pressing and HTHP sintering methods to prepare composite materials is limited by their expensive equipment [ 14 ]. The precursor conversion method is characterized by a long preparation period and unevenly distributed pores in the product.…”

Section: Introductionmentioning

confidence: 99%

Investigation of the Fabrication of Diamond/SiC Composites Using α-Si3N4/Si Infiltration

Xing,

Zhang,

Zhao

et al. 2023

Materials

View full text Add to dashboard Cite

Diamond/SiC (Dia/SiC) composites possess excellent properties, such as high thermal conductivity and low thermal expansion coefficient. In addition, they are suitable as electronic packaging materials. This study mainly optimized the diamond particle size packing and liquid-phase silicon infiltration processes and investigated a method to prevent the adhesion of the product to molten silicon. Based on the Dinger–Funk particle stacking theory, a multiscale diamond ratio optimization model was established, and the volume ratio of diamond particles with sizes of D20, D50, and D90 was optimized as 1:3:6. The method of pressureless silicon infiltration and the formulas of the composites were investigated. The influences of bedding powder on phase composition and microstructure were studied using X-ray diffraction and scanning electron microscopy, and the optimal parameters were obtained. The porosity of the preform was controlled by regulating the feeding amount through constant volume molding. Dia/SiC-8 exhibited the highest density of 2.73 g/cm3 and the lowest porosity of 0.6%. To avoid adhesion between the sample and buried powder with the bedding silicon powder, a mixed powder of α-Si3N4 and silicon was used as the buried powder and the related mechanisms of action were discussed.

show abstract

Tungsten Carbides

Shabalin

2022

Ultra-High Temperature Materials IV

View full text Add to dashboard Cite

Study HTHP Sintered WC/Co Hardmetal

Cited by 7 publications

References 18 publications

The structure and the properties of WC-Co samples produced by SLM technology and carbon-doped prior to HIP processing

The structure and the properties of WC-Co samples produced by SLM technology and carbon-doped prior to HIP processing

Investigation of the Fabrication of Diamond/SiC Composites Using α-Si3N4/Si Infiltration

Tungsten Carbides

Contact Info

Product

Resources

About