Study and realization of a transfer detector based on porous silicon for radiometric measurements

Achour, Z. Ben; Touayar, O.; Akkari, Emna; Bastié, Jean; Bessaı̈s, B.; Brahim, J. Ben

doi:10.1016/j.nima.2006.12.035

Cited by 6 publications

(7 citation statements)

References 8 publications

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“…The practical realization and the metrological characterization of the photodiode produced at the Laboratory of Radiations Metrology (LMR-Tunisia) in collaboration with the Photovoltaic Team of the Institut National de la Recherche Scientifique et de Technologie-Tunisia (INRST-Tunisia) were the objects of scientific publications [5,6]. In what follows, we will limit to give the essential.…”

Section: Structure Of the Realized Psiz Photodiodementioning

confidence: 99%

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Stability Study of the Metrological Characteristics of a ZnO/PS/C-Si Photodiode (PSiZ) Used as a Transfer

Achour¹,

Touayar²,

Sifi³

2012

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This paper presents the results of a stability study of a photodiode realized in the Laboratoire de Métrologie des Rayonnements (LMR-INSAT, Tunisia). The study was performed during six years and concerned with the photodiode optical and electrical characteristics. This study involves in one side, the reflectivity stability for different wavelengths and in the other side, the stability of the series and shunt resistances. The experimental results confirm the stability of the photodiode spectral response since the reflection coefficient maximum uncertainty is equal to 0.0055 with an experimental uncertainty of about 0.0016 (at 1 level) for the mean value of the reflectivity over the study duration. Moreover, the shunt and series resistances are equal to 5.14 kΩ and 7.61 Ω respectively with an uncertainty value of 0.01 kΩ and 0.04 Ω respectively (at 1 level). This photodiode does not display any ageing aspect. Consequently, the PSiZ photodiode can be used as a Transfer Standard for radiometric measurement in the visible spectral range.

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Section: Structure Of the Realized Psiz Photodiodementioning

confidence: 99%

“…In order to minimize these fluctuations and instabilities, we studied and produced a photodiode containing porous silicon on which we deposited a layer of ZnO [5].…”

Section: Introductionmentioning

confidence: 99%

Stability Study of the Metrological Characteristics of a ZnO/PS/C-Si Photodiode (PSiZ) Used as a Transfer

Achour¹,

Touayar²,

Sifi³

2012

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“…Indeed, the ZnO thin films in addition to their transparent features in the near infrared, are excellent candidates for the transparent electrodes and antireflective coats [3][4][5]. The optical and electrical properties of ZnO thin films allow them to reduce the reflectivity of the substrates on which they are deposited and to drive the charges created on the surface to the outer circuit [6].…”

Section: Introductionmentioning

confidence: 99%

“…(1)) which itself depends on the diffusion constant of the charge carriers in the semiconductors [1,6].…”

Section: Introductionmentioning

confidence: 99%

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Achour

Hammami

Touayar

2017

Int. J. Metrol. Qual. Eng.

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Abstract. The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range. In this work, we present the design and realization of a detector for near infrared radiation measurements: it is a photodiode ZnO/Ge based on a germanium junction and a thin layer of zinc oxide. Then we electrically and optically characterized the photodiode thus realized, for which we developed an energy band diagram. The obtained results have allowed us to note an improvement in the optical and electrical characteristics of the ZnO/Ge photodiode, compared to those performed in our laboratory and based on single Germanium. The reflectivity is reduced by about 9% for the wavelength range of 800 nm to 2000 nm. The shunt resistance increases from 95 V to 12.915 kV. However, the series resistance increases from 1.08 V to 36 V but it is still an acceptable value. The proposed energy band diagram explains the charge carrier transport phenomena for our structure and it is in good agreement with experimental results.

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“…The Шth group elements such as Al, Ga and In are doped in ZnO to improve the n-type conductivity while the transition metal elements are doped to optimize it magnetic property [7,12,13]. However, few of study focus on the pyroelectric property of ZnO-based *tanruiqin@nbu.edu.cn; phone 86-574-87600946; fax 86-574-87600946 materials [10,[14][15][16][17][18][19]. The objectives of this work are to synthesize the ZnO and magnesium doped ZnO ceramic and further to explore their pyroelectric properties.…”

Section: Introductionmentioning

confidence: 99%

Pyroelectric properties of ZnO-based nanostructured polycrystalline ceramics

et al. 2009

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Pyroelectric materials take the most important role in pyroelectric infrared detectors. A high temperature above 550 °C is required to obtain the traditional pyroelectric films such as PZT, BST, etc., which would hold back the realization of integration of pyroelectric thin film monolithic uncooled focal plane array (UFPA). Zinc oxide (ZnO) has been studied widely in recent years because of its excellent semiconducting, optical, piezoelectric and pyroelectric multiple properties. All these imply its potential applications in photo-catalysis, composite materials, dye-sensitized solar cells, sensors, as well as in UFPA applications. In the wurtzite structure of ZnO, it is easy to replace Zn by doping other metal elements such as Al, Ga, In, Sn, Cr, Mg, etc. for tailoring its properties. Thus an ideal preparation method is demanded to easily control the particle size, size distribution, crystallinity and morphology. On the other hand, the structureperformance relationship of ZnO in pyroelectric applications is still not clear. In the present work, we developed a surfactant-assisted complex sol-gel method, which allows easily control of the particle size, size distribution, crystallinity, morphology and doping of ZnO nanoparticles. Two types of ZnO nanoparticles including pure ZnO and magnesium doped ZnO were prepared for our investigation. Their detailed morphology, structural, optical properties would be presented. Pure wurtzite structure was obtained after 500 °C calcinations for the sample with the Mg concentration in Mg x Zn 1-x O below 10 at%. Well dispersed ZnO-based nanoparticles with uniform size distribution were obtained using PEG 2000 as a surfactant. The as-obtained ZnO-based nanoparticles were also sintered for pyroelectric property test. Their pyroelectric properties were compared in order to reveal its possible applications as target materials for pyroelectric films preparation in infrared detector arrays.

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Study and realization of a transfer detector based on porous silicon for radiometric measurements

Cited by 6 publications

References 8 publications

Stability Study of the Metrological Characteristics of a ZnO/PS/C-Si Photodiode (PSiZ) Used as a Transfer

Stability Study of the Metrological Characteristics of a ZnO/PS/C-Si Photodiode (PSiZ) Used as a Transfer

Development and characterization of a ZnO/Ge photodiode for optical radiation measurements in the near infrared

Pyroelectric properties of ZnO-based nanostructured polycrystalline ceramics

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