Write-once-read-many-times (WORM)
memory characteristics
with a
large memory window are demonstrated in a thin-film transistor (TFT)
composed of an indium-gallium-zinc oxide (IGZO) channel and a lithium-cobalt
oxide (LiCoO
x
) ion-supplying layer in
the gate oxide. While the device with a thicker (5 nm) tunneling oxide
showing a threshold voltage shift (ΔV
T) of about 5 V by electron charging upon positive gate voltage (V
GS) sweep to +25 V, the device with a 2 nm-thick
tunneling oxide exhibits a large memory window with ΔV
T > 20 V by Li-ion migration from LiCoO
x
to IGZO channel, which can be controlled
as multilevel states with respect to the V
GS amplitude. Incorporation of Li ions into the IGZO channel acting
as p-type dopants reduces carrier concentration in the channel and
consequently increases V
T. The increased V
T and the consequently reduced drain current
are not instantly restored back by applying negative V
GS, featuring WORM memory characteristics. Although the
device undergoes partial retention loss, the retention remains up
to about 90% after 100 min of retention time. These results verify
WORM memory operations in the IGZO TFTs through gate voltage-driven
Li-ion incorporation into the IGZO channel to modify its conductive
states instead of using a typical electrical charging route.