Studies on the formation of microcrystalline silicon with PECVD under low and high working pressure

Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition

“…The crystalline fraction of the films increases from $30% to 50%, estimated by fitting the reflectance spectra 1 [22,23]. This increase of crystalline fraction agrees well with the increase of Ha=Si à ratio, supported by the Lihui et al [24]. When the power is further increased to 40 and 50 W, the reflectance spectra do not show any peaks at 275 and 365 nm confirming that the films are amorphous as shown in Raman spectra Fig.…”

“…Thus, the amorphous i-layer at high power can be explained on the basis of increased ion bombardment on the growth surface of i-layer. This leads to the random orientation of the crystallite plane and thereby affecting the crystallinity of the material [24]. Under these conditions, the amorphous to nano-crystalline transition regime lies in between 30 and 40 W plasma power.…”

High pressure processing of hydrogenated amorphous silicon solar cells: Relation between nanostructure and high open-circuit voltage

“…In addition, the radio frequency (RF) power density (P rf % 0.1 mW/cm 2 ) is significantly increased when compared to the RF power density used during low pressure processing (P rf < 0.05 mW/cm 2 ) when aiming to grow dense a-Si:H material. 32 The electrode distance is 8 mm and the substrate temperature is 170 C.…”

High quality nanocrystalline silicon thin film fabricated by inductively coupled plasma chemical vapor deposition at 350°C

“…Therefore, when high density plasma is generated by high RF power to deposit high quality nc-Si and to obtain a high deposition rate, ion bombardment increases simultaneously and leads to a decrease of crystallinity of the nc-Si film [20]. In the process of ICP-CVD with no substrate RF bias, on the other hand, power is applied to the coil out of the chamber to induce a magnetic field which induces an electric filed in the chamber for plasma generation.…”