Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition

Kumar, Prabhat; Zhu, Feng; Madan, A.

doi:10.1016/j.ijhydene.2008.02.037

Cited by 17 publications

(9 citation statements)

References 34 publications

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“…It is because the electron temperature (Si* / SiH*) is increasing along with RF power increase. Ion bombardment will cause structure of film becoming friable with heavy defects and thus decreases the deposition rate [16,17] which appears beyond 33mW/cm 2 as shown in Figure 3. Based on the above results, by adjusting the RF power, Hα* / Si* or Hα* / SiH* can't become a crystallinity index.…”

Section: Resultsmentioning

confidence: 99%

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

Hsieh

et al. 2016

2016 China Semiconductor Technology International Conference (CSTIC)

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Phosphorus doped nanocrystalline silicon (nc-Si) that deposited on a p-type silicon substrate was prepared by standard radio-frequency plasma enhanced chemical vapor deposition (RF-PECVD). The optical emission spectroscopy (OES) is used as a diagnostic tool for analyzing the processing species and intensity in plasma. The obtained SiH* spectra are recorded to explain results from the deposition rate of nanocrystalline silicon. The deposition rate increases with increasing power when the electrode distance, working pressure and total flow rate are fixed. Moreover, we also describe ratios of Hα* / SiH* and Si* / SiH* to represent the crystallization rate index and electron temperature respectively. Based on OES results, we can utilize plasma spectra as database to monitor film properties. The spectroscopic ellipsometer (SE) and hall measurements were used to further study the growth rate, crystallinity, and electrical property of the films. Under the process conditions of 225°C substrate temperature, 11mW/cm2 power density, 300mTorr working pressure and 30mm electrode distance, the best optimized n-type nc-Si films on a 4cm 2 bifacial p-type Cz silicon wafer were obtained.

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Section: Resultsmentioning

confidence: 99%

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

Hsieh

et al. 2016

2016 China Semiconductor Technology International Conference (CSTIC)

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“…After continuous AM1.5 where a strong device degradation, sometimes exceeding 20% has been reported [46]. These data cannot be compared with industry data where the devices are differently processed, as are the recent reported data from MVSystems and United Solar for instance [64][65][66][67][68][69]. The aim is to prove the consistency of the laboratory results [63] and the integration of these nanostructured silicon thin films in device structure such as solar cells, thin film position sensitive detectors and thin film transistors.…”

Section: Solar Cellsmentioning

confidence: 99%

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

Martins

Raniero

Pereira

et al. 2009

Philosophical Magazine

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“…Recently, nanosilicon attracting great attention from world scientists and some properties of this matter studied theoretically and experimentally [1][2][3][4][5][6][7]. Nano Si also has a wide range of application areas as electronics materials, particularly in space electronics and nuclear technologies [8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Energy transfer and defect formation processes in nano silicon under the influence of epithermal neutrons

Garibli

2019

Eurasian j. phys. funct. mater.

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The neutrons scattering and capture cross-section processes has been calculated for natural 28 Si , 29 Si , 30 Si isotopes which are main part of nanosilicon samples when irradiated for 20 hours by epithermal neutron flux. The values of energies has been determined which given to nanosilicon nuclei as a result of scattering processes in the energy intervals of investigated neutrons. The cross-sections of radiation capture process and the amount of 31 Si radioactive isotope which can be formed by by 30 Si isotope in the energy interval of epithermal neutrons, the parameters of energy supply and ionization processes has been determined by interaction between energy carried of β -particles which disseminated in evironment and silicon atoms as a result of their β -decay. The formed defects has been determined in electron structure of nanosilicon under the influence of primary and secondary electron beams. Characterized interaction processes between nanosilicon and gamma rays irradiated from radioactive isotopes in impurities up to 1% in nanosilicon which formed under the influence of neutron flux. As a result of SEM investigation, interaction between surface defects inherent to nanoscale systems and O 2 , H 2 O active components that arranged environment and increasing number of surface oxidation atoms determined under the influence of radiation from radioactive isotopes which are product of radiation capture processes when impact by neutron flux. The progression of agglomeration processes of nanosilicon particles under the influence of secondary radiation processes that caused by neutron flux has also been proved experimentally by SEM investigations. The characteristic of identification and generation processes of paramagnetic defects, that formed as a result of secondary radiation processes investigated by electron paramagnetic resonance spectroscopy method.

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Electrical and structural properties of nano-crystalline silicon intrinsic layers for nano-crystalline silicon solar cells prepared by very high frequency plasma chemical vapor deposition

Cited by 17 publications

References 34 publications

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

The plasma diagnosis by optical emission spectroscopy for the study of phosphorus doped nanocrystalline silicone film growth

Nanostructured silicon and its application to solar cells, position sensors and thin film transistors

Energy transfer and defect formation processes in nano silicon under the influence of epithermal neutrons

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