2012
DOI: 10.1166/jnn.2012.6209
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Studies on Optical Limiting Characteristics of Silicon Nanoparticles Synthesized by Laser Ablation

Abstract: We present synthesis of silicon nanoparticles dispersed in toluene by laser ablation and studies on their optical limiting properties with nanosecond laser pulses at 532 nm. Silicon nanoparticles in toluene show better optical limiting compared to standard optical limiter fullerene C60 in toluene. Optical limiting threshold of silicon nanoparticles is about three times less than that of C60. Detailed studies using Z-scan experiments, angle dependent scattering, intensity dependent transmission and temporal pro… Show more

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Cited by 6 publications
(3 citation statements)
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References 15 publications
(22 reference statements)
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“…Low power OL, with low limiting threshold, was obtained, based on the phenomenon of thermal defocusing. Si NPs dispersed in toluene were also tested with ns laser pulses at 532 nm . Their OL properties were found to be better than standard optical limiter fullerene C60 in toluene with a threshold about 3 times smaller.…”
Section: Inorganic Materialsmentioning
confidence: 99%
See 1 more Smart Citation
“…Low power OL, with low limiting threshold, was obtained, based on the phenomenon of thermal defocusing. Si NPs dispersed in toluene were also tested with ns laser pulses at 532 nm . Their OL properties were found to be better than standard optical limiter fullerene C60 in toluene with a threshold about 3 times smaller.…”
Section: Inorganic Materialsmentioning
confidence: 99%
“…Si NPs dispersed in toluene were also tested with ns laser pulses at 532 nm. 565 Their OL properties were found to be better than standard optical limiter fullerene C60 in toluene with a threshold about 3 times smaller. The main mechanism of the resulting OL effect was nonlinear absorption and thermal nonlinear refraction, besides nonlinear scattering.…”
Section: Metal Nanoparticlesmentioning
confidence: 99%
“…Ag substrates corresponding to the ablation at different fluences in water as mentioned above are depicted in Figure 10, which revealed fabrication of pillar-like structures in the laser exposed portions. LAL is utilized with both ns and fs pulses to produce many other nanomaterials such as Ge, [156][157] silicon, [158][159] GaAs, 160 antimony sulphide, 161 and zinc, 162 Mg/MgO, 163 Ti/TiO 2 , 164 165…”
Section: Effect Of Beam Waist and Multiple/double/singlementioning
confidence: 99%