Studies on nanocrystalline cadmium sulphide (CdS) thin films deposited by spray pyrolysis

Yadav, Abhijit A.; Barote, M.A.; Masumdar, E.U.

doi:10.1016/j.solidstatesciences.2010.04.001

Cited by 74 publications

(27 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The analysis of the XRD patterns shows that the CuInS 2 structure is a tetragonal chalcopyrite phase and a hexagonal or cubic phase for CdS as shown in Fig. 1, this is similar to the observed by A.AYadav et al [14]. The average grain size of the CCIS, and CdSis calculated from the full width at half maximum (FWHM) of the (101) line of the film, byusing the scherrer formula [15] were 16, and 35 nm, respectively.These results agree with those of Ravichandran et al [16], and [17].…”

Section: A Xrd Analysis and Surface Morphologysupporting

confidence: 87%

Structure and Optical Properties of the CdS/Cd2x(CuIn)1- xS2Heterojunction Prepared by Chemical Spray Pyrolysis

Al-Rawi¹

2013

IOSRJEN

View full text Add to dashboard Cite

Abstract:The structural and optical properties of the CdS, Cd 2x (CuIn) 1-x S 2 (CCIS) thin films, at x=0.2,heterojunction were studied in the present paper. The heterojunction films deposited successfully on glass slides using by the spray pyrolysis technique at 623K. The thin films CdS, CCIS and the heterojunction ITO/CdS/CCIS were characterized by using x-ray diffraction. This is to find the polycrystalline series of the CdS, and CCIS solid solution with many phases as a mixture of chalcopyrite and zinc blend. The CdS, and CCIS thin films have a grain size 35 nm, and 16 nm respectively. The surface morphology was characterized by using atomic force microscopy (AFM) technique. The optical properties of the prepared thin films were investigated by using a UV-VIS spectrophotometer in the wavelength of 300 nm to 1100 nm. The films, ITO, CdS, and CCIS show direct transition with optical energy gap (Eg) values 3.52, 2.42, and 1.7eV respectively. The optical transmission (T),absorption (A) andrefractive index (n) were also discussed . Keywords: The ITO/CdS/Cd 2x (CuIn) 1-x S 2 Structure, Optical, heterojunction and thin films..

show abstract

Section: A Xrd Analysis and Surface Morphologysupporting

confidence: 87%

Structure and Optical Properties of the CdS/Cd2x(CuIn)1- xS2Heterojunction Prepared by Chemical Spray Pyrolysis

Al-Rawi¹

2013

IOSRJEN

View full text Add to dashboard Cite

show abstract

“…Numerous techniques have been used to grow CdS and Cd 1-x Zn x S thin films including dip coating [16], electrodeposition [17], chemical vapor deposition (CVD) [18], aerosol-assisted CVD (AA-CVD) [19][20][21], chemical bath deposition (CBD) [2,8,22,23], spray pyrolysis [24,25], thermal evaporation [26], successive ionic layer and reaction (SILAR) [27], thermolysis [28,29], electrochemical atomic layer epitaxy (ECALE) [11], sol-gel spin coating, [30,31] doctor's blade, [32] and others [14,21,33,34]. Spin coating (SC) is a particularly useful method for the deposition of thin films [35,36].…”

Section: Introductionmentioning

confidence: 99%

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

2017

View full text Add to dashboard Cite

Thin films of Cd 1-x Zn x S (CZS) were prepared by a novel spin coating/melt method from cadmium ethylxanthato [Cd(C 2 H 5 OCS 2 ) 2 ] and zinc ethylxanthato [Zn(C 2 H 5 OCS 2 ) 2 ] in x ratios of 0-0.15 and of 1. A solution of the precursor(s) in THF was spin coated onto a glass substrate and then heated at 250°C for 1 h under N 2 . The thickness of the film formed can be controlled by varying the solution composition and/or the spin rate of the coating. A total metal precursor solution concentration of 50 mM was used in all cases. The films were characterized by p-XRD, SEM, EDX, ICP-AES, XPS, UV-Vis absorption spectroscopy, Raman spectroscopy and resistivity measurements. The band gaps of the films were between 2.35-2.58 and 3.75 eV (0 B x B 0.15 and at x = 1). The resistivity of Cd 1-x Zn x S films was found to vary linearly with zinc contents, and the properties of the films suggest potential application to photovoltaics as window layers. This work is the first study to demonstrate Cd 1-x Zn x S thin films by a spin coating/melt method from xanthato precursors.

show abstract

“…Cadmium sulphide, a well known low band gap, n-type semiconductor (E g w2.4 eV), is the most promising candidate not only for PEC hydrogen production applications but also for various other applications; viz. in opto-electronic devices, such as laser material, transducers, photo-conducting cells, photo-sensor, optical waveguides and non-linear integrated optical devices [8]. Consequently it has been chosen in the present study.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of large area nanorod like structured CdS photoanode for solar H2 generation using spray pyrolysis technique

Pareek

Dom

Borse

2013

International Journal of Hydrogen Energy

View full text Add to dashboard Cite

Studies on nanocrystalline cadmium sulphide (CdS) thin films deposited by spray pyrolysis

Cited by 74 publications

References 22 publications

Structure and Optical Properties of the CdS/Cd2x(CuIn)1- xS2Heterojunction Prepared by Chemical Spray Pyrolysis

Structure and Optical Properties of the CdS/Cd2x(CuIn)1- xS2Heterojunction Prepared by Chemical Spray Pyrolysis

The deposition of thin films of cadmium zinc sulfide Cd1−x Zn x S at 250 °C from spin-coated xanthato complexes: a potential route to window layers for photovoltaic cells

Fabrication of large area nanorod like structured CdS photoanode for solar H2 generation using spray pyrolysis technique

Contact Info

Product

Resources

About