A nanostructured heterojunction of CdS/Cd2x(CuIn)1-xS2 with x=0.2 was prepared by chemical spray pyrolysis on ITO/glass substrate at 350 °C. The X-ray diffraction pattern obtained from CdS/Cd2x(CuIn)1-xS2 solar cell confirmed the formation of Cd2x(CuIn)1-xS2 (CCIS), CuInS2, In2S3, and CdS phases, with crystallite size of 16 nm for CCIS and 26 nm for CdS films. The morphology of the film surface was obtained by AFM technique, which produced a greater grain size of 58.3 nm for CdS and 80 nm for CCIS surfaces. Optical absorbance analysis confirmed the composition-controlled electronic transition in the thin film, and the energy band gap was observed to red shift with the increase in the value of x. The electrical properties produced a P-type conductivity of CCIS with two activation energies. I–V characteristic in dark condition produced unsymmetrical heterojunctions, whereas abrupt-type heterojunctions were produced from the C–V curve. The solar energy conversion efficiencies achieved upon illumination of 100 mW/cm2 were 0.35%, 0.5%, 0.9%, and 1.28% for CCIS thicknesses of 610, 800, 910, and 1000 nm, respectively.
Abstract:The structural and optical properties of the CdS, Cd 2x (CuIn) 1-x S 2 (CCIS) thin films, at x=0.2,heterojunction were studied in the present paper. The heterojunction films deposited successfully on glass slides using by the spray pyrolysis technique at 623K. The thin films CdS, CCIS and the heterojunction ITO/CdS/CCIS were characterized by using x-ray diffraction. This is to find the polycrystalline series of the CdS, and CCIS solid solution with many phases as a mixture of chalcopyrite and zinc blend. The CdS, and CCIS thin films have a grain size 35 nm, and 16 nm respectively. The surface morphology was characterized by using atomic force microscopy (AFM) technique. The optical properties of the prepared thin films were investigated by using a UV-VIS spectrophotometer in the wavelength of 300 nm to 1100 nm. The films, ITO, CdS, and CCIS show direct transition with optical energy gap (Eg) values 3.52, 2.42, and 1.7eV respectively. The optical transmission (T),absorption (A) andrefractive index (n) were also discussed . Keywords: The ITO/CdS/Cd 2x (CuIn) 1-x S 2 Structure, Optical, heterojunction and thin films..
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