Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing

Dixit, V. K.; Ganguli, Tapas; Sharma, T. K.; Kumar, Ravi; Porwal, S.; Shukla, V.; Ingale, Alka; Tiwari, Pragya; Nath, Ashish Kumar

doi:10.1016/j.jcrysgro.2006.03.060

Cited by 27 publications

(22 citation statements)

References 13 publications

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“…Among the many alternatives followed for III-V on silicon integration [1], one of the most successful approaches so far investigated consists on the metamorphic integration of III-V semiconductors (GaAsP or GaInP) on a Si bottom cell, through the use of a GaP nucleation layer. This layer acts as a defect-free III-V template on Si [2][3][4][5][6], onto which a GaAsP graded buffer, which aims to confine the propagation of structural defects (i.e. threading dislocations), can be integrated.…”

Section: Introductionmentioning

confidence: 99%

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

García‐Tabarés

Rey‐Stolle

2014

Solar Energy Materials and Solar Cells

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With the final goal of integrating III-V materials on silicon substrates for tandem solar cells, the influence of the Metal-Organic Vapor Phase Epitaxy (MOVPE) environment on the minority carrier properties of silicon wafers has been evaluated. These properties will essentially determine the photovoltaic performance of the bottom cell in a III-V-on-Si tandem solar cell. A comparison of the base minority carrier lifetimes obtained for different thermal processes carried out in a MOVPE reactor on Czochralski silicon wafers has been carried out. An important degradation of minority carrier lifetime during the surface preparation (i.e. H 2 anneal) has been observed. Three different mechanisms have been proposed for explaining this behavior: 1) the introduction of extrinsic impurities coming from the reactor; 2) the activation of intrinsic lifetime killing impurities coming from the wafer itself; and finally, 3) the formation of crystal defects, which eventually become recombination centers. The effect of the emitter formation by phosphorus diffusion has also been evaluated. In this sense, it has been reported that lifetime can be recovered during the emitter formation either by the effect of the P on extracting impurities, or by the role of the atomic hydrogen on passivating the defects.Keywords: III-V on Silicon, minority carrier lifetime, MOVPE, heteroepitaxy, MJSC, bottom subcell.

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Section: Introductionmentioning

confidence: 99%

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

García‐Tabarés

Rey‐Stolle

2014

Solar Energy Materials and Solar Cells

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“…In this respect, both possibilities (i.e. group-V and group-Ill preexposure) have been considered in literature; however, the group-V exposure is usually preferred for favouring a 2D growth [2,4,10,11]. While PH 3 has been generally used for the group-V exposure; it has been also reported the beneficial effects of AsH 3 on preparing the surface for a high quality nucleation [16].…”

Section: Iii-v/slnucleationmentioning

confidence: 99%

“…Among the different existing alternatives for their integration [1], currently the most developed technique is based on the direct epitaxial growth of III-V nucleation layers on Si-substrates. This approach consists on the growth of a GaP nucleation layer onto a Si substrate to obtain a III-V template free of nucleation-related defects [2][3][4][5] for growing subsequent III-V epitaxial layers. The grading of the lattice constant is achieved by a transparent step-graded GaAs y Pi_ y buffer to shift the lattice constant to the target top cell composition (Figure 1 towards the optimization of key steps in the epitaxial growth of III-V compounds on Si [3,6,7].…”

Section: Introductionmentioning

confidence: 99%

Optimizing diffusion, morphology and minority carrier lifetime in Silicon for GaAsP/Si dual-junction solar cells

García‐Tabarés

Rey‐Stolle

Martín

2015

2015 10th Spanish Conference on Electron Devices (CDE)

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Abstract-Dual-junction solar cells formed by a GaAsP cell on a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on Si for photovoltaic applications. In this study, we analyze several factors for the optimization of the bottom cell, namely, 1) the emitter formation as a result of phosphorus diffusion; 2) the growth of a high quality GaP nucleation layer; and 3) the process impact on the bottom subcell PV properties.

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“…Interesting efforts in this direction were carried out in the past century and have reemerged strongly in recent years. One of the most successful approaches so far investigated is based on the use of a GaP nucleation layer to achieve a defect-free III-V template on Si [3][4][5][6]. On this template, GaAsP graded buffers can be grown onto which GaAsP or GalnP topcells of the adequate bandgap can be integrated, thus forming a GaAsP/Si [7][8][9][10][11] or a GalnP/Si [12] dual junction solar cell.…”

Section: Introductionmentioning

confidence: 99%

Understanding phosphorus diffusion into silicon in a MOVPE environment for III–V on silicon solar cells

García‐Tabarés¹,

Martín²,

García³

et al. 2013

Solar Energy Materials and Solar Cells

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Dual-junction solar cells formed by a GaAsP or GalnP top cell and a silicon bottom cell seem to be attractive candidates to materialize the long sought-for integration of III-V materials on silicon for photovoltaic applications. When manufacturing a multi-junction solar cell on silicon, one of the first processes to be addressed is the development of the bottom subcell and, in particular, the formation of its emitter.In this study, we analyze, both experimentally and by simulations, the formation of the emitter as a result of phosphorus diffusion that takes place during the first stages of the epitaxial growth of the solar cell. Different conditions for the Metal-Organic Vapor Phase Epitaxy (MOVPE) process have been evaluated to understand the impact of each parameter, namely, temperature, phosphine partial pressure, time exposure and memory effects in the final diffusion profiles obtained. A model based on SSupremlV process simulator has been developed and validated against experimental profiles measured by ECV and SIMS to calculate P diffusion profiles in silicon formed in a MOVPE environment taking in consideration all these factors.

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Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing

Cited by 27 publications

References 13 publications

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

Impact of metal-organic vapor phase epitaxy environment on silicon bulk lifetime for III–V-on-Si multijunction solar cells

Optimizing diffusion, morphology and minority carrier lifetime in Silicon for GaAsP/Si dual-junction solar cells

Understanding phosphorus diffusion into silicon in a MOVPE environment for III–V on silicon solar cells

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