2011
DOI: 10.1016/j.jallcom.2010.10.169
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Studies on morphological change and optical properties for various Zn concentrations in CdTe thin film prepared by stacked elemental layer method

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Cited by 16 publications
(7 citation statements)
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“…However, transmittance remained also less for T 6 and T 7 , while they had reduced free Zn prominence. This was because of absorption by liberated Cd particles in the concerned wavelength range [20]. However, T 6 and T 7 had relatively higher transmittance values compared to samples T 1 -T 5 .…”
Section: Resultsmentioning
confidence: 90%
See 1 more Smart Citation
“…However, transmittance remained also less for T 6 and T 7 , while they had reduced free Zn prominence. This was because of absorption by liberated Cd particles in the concerned wavelength range [20]. However, T 6 and T 7 had relatively higher transmittance values compared to samples T 1 -T 5 .…”
Section: Resultsmentioning
confidence: 90%
“…Samples T 1 -T 5 revealed prominent Zn peaks in the XRD spectra. The presence of unreacted Zn is greatly responsible there for the reduction of transmittance [20]. However, transmittance remained also less for T 6 and T 7 , while they had reduced free Zn prominence.…”
Section: Resultsmentioning
confidence: 96%
“…Transmission values too were reduced for T 1 -T 5 compared to CdTe. It has been suggested that non-reacted Zn greatly reduces transmittance values [22,23]. Major 002(H) plane of non-reacted Zn was seen in the XRD spectrum of all the samples from T 1 -T 5 .…”
Section: Optical Analysismentioning
confidence: 95%
“…Reduced Non-local pseudo-potential method also suggests that there is not likely to be any indirect energy gap less than direct band gap for CdTe or ZnTe. It is suggested that at lower photon energy transitions, presence of high density defects, charge impurities and disorders at grain boundaries could cause a decrease in direct band-gap [22][23][24]. So presence of non-reacted Zn and/or Cd contributed to reduction of band-gap.…”
Section: Optical Analysismentioning
confidence: 99%
“…A cadmium telluride solar cell uses a cadmium telluride (CdTe) thin film, a semiconductor layer to absorb and convert sunlight into electricity. CdTe is a near perfect material for PV application with a direct band gap of 1.5 eV that is closely matched to the terrestrial solar spectrum and a high optical absorption coefficient where less than 1 m thickness is adequate to absorb the incident light [18,19]. Thus, it is interesting that incorporating CdTe onto one-dimensional TiO 2 nanorods to form type-II band alignment, which may enhance the photoelectric current of the TiO 2 .…”
Section: Introductionmentioning
confidence: 99%