Growth and characterization of Cd 1− x Zn x Te/ZnO heterostructures from furnace-annealed CdTe/Zn multi-stacks

Sigmoid-growth curve of lattice-constant against annealing-temperature of Cd1−xZnxTe thin films and its structural, optical and morphological characteristics

“…Transmission values too were reduced for T 1 -T 5 compared to CdTe. It has been suggested that non-reacted Zn greatly reduces transmittance values [22,23]. Major 002(H) plane of non-reacted Zn was seen in the XRD spectrum of all the samples from T 1 -T 5 .…”

“…Reduced Non-local pseudo-potential method also suggests that there is not likely to be any indirect energy gap less than direct band gap for CdTe or ZnTe. It is suggested that at lower photon energy transitions, presence of high density defects, charge impurities and disorders at grain boundaries could cause a decrease in direct band-gap [22][23][24]. So presence of non-reacted Zn and/or Cd contributed to reduction of band-gap.…”