2013
DOI: 10.1016/j.jcrysgro.2012.12.095
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Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRD

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Cited by 9 publications
(6 citation statements)
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“…More recently it has been claimed that c-MnAs can be grown directly on InP(001) alongside the ordinary hexagonal phase. 15,16 We recently demonstrated the growth of c-MnSb within n-MnSb¯lms on GaAs(111), where the large grain sizes of the c-MnSb (! 10 nm) made structural identi¯cation more straightforward.…”
Section: Introductionmentioning
confidence: 99%
“…More recently it has been claimed that c-MnAs can be grown directly on InP(001) alongside the ordinary hexagonal phase. 15,16 We recently demonstrated the growth of c-MnSb within n-MnSb¯lms on GaAs(111), where the large grain sizes of the c-MnSb (! 10 nm) made structural identi¯cation more straightforward.…”
Section: Introductionmentioning
confidence: 99%
“…This generates a 100% spin-polarized current that is generated around the Fermi level. A way to obtain the half-metal property is by growing epitaxially ferromagnetic (FM) materials onto a semiconductor substrate, for example, the III–V semiconductor family. …”
Section: Introductionmentioning
confidence: 99%
“…However, halfmetallicity remains. Oomae et al 12,13 reported the epitaxial growth of MnAs, an FM material, onto the InP (001) surface.…”
Section: ■ Introductionmentioning
confidence: 99%
“…Earul Islam and Akibori grew MnAs on InAs(1 1 1) B virtual substrates (grown on GaAs) [13] and fabricated a lateral spin valve showing a room temperature spin injection efficiency of approximately 8.5% and spin diffusion length of 0.7 µm [14]. Oomae et al grew MnAs directly on InP, with the presence of the fully spinpolarized cubic B3 polymorph reported [15]. MnSb has been grown on 1 As virtual substrates [16], a system for which a good lattice match can be achieved, and co-existence of cubic and hexagonal MnSb polymorphs was shown.…”
Section: Introductionmentioning
confidence: 99%