Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Mousley, Philip J.; Burrows, Christopher W.; Ashwin, M. J.; Sánchez, Ana; Lazarov, Vlado K.; Bell, Gavin R.

doi:10.1016/j.jcrysgro.2018.07.006

Cited by 7 publications

(8 citation statements)

References 35 publications

(39 reference statements)

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“…At 30 nm, the two weakest peaks are due to MnSb(

1 \overset{1}{true} 01

) inclusions, commonly found in thicker MnSb films. A GaSb peak due to Ga segregation can also be observed, as well as a broad feature due to the Sb cap. These latter peaks are present at other sample thicknesses, and the remaining sharp and weak features are most likely due to multiple scattering.…”

Section: Resultsmentioning

confidence: 93%

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Hybrid Heteroepitaxial Growth Mode

Burrows

Hase

Bell

2018

Physica Status Solidi (a)

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A "hybrid" surface growth mode is studied by in situ scanning tunneling microscopy and ex situ synchrotron X-ray diffraction. Heteroepitaxial growth of MnSb(0001) on GaAs(111) leads to the direct formation of islands, but the islands themselves grow in a local layer-by-layer fashion, having low aspect ratio and flat tops. Strained and relaxed islands co-exist prior to island coalescence, confirming that dislocation formation occurs locally over a range of average film thicknesses.

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“…At 30 nm, the two weakest peaks are due to MnSb(

1 \overset{1}{true} 01

Section: Resultsmentioning

confidence: 93%

“…Recently, two‐stage epitaxial growth for MnSb on In 0.5 Ga 0.5 As(111) substrates has been investigated. An initial low‐temperature growth stage was tried in order to suppress interdiffusion of metal species between the substrate and epilayer.…”

Section: Resultsmentioning

confidence: 99%

Hybrid Heteroepitaxial Growth Mode

Burrows

Hase

Bell

2018

Physica Status Solidi (a)

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“…One of the key problems in synthesis of MnSb thin films 40 , 54 and nanoparticles 51 , 52 is partial segregation of Sb. Given the powder-like intensity profile of MnSb phase in our samples, one can assume that potentially segregated Sb crystallites should also yield peaks with relative intensities close to those of the powder reference, suggesting the absence of preferred crystal orientation.…”

Section: Resultsmentioning

confidence: 99%

“…Due to compatibility with conventional III-V semiconducting materials, thin films of pure MnSb have been intensively studied as a perspective material for creation of efficient FM/semiconductor heterostructures. In relevant works, MnSb films were usually obtained from the elemental sources using molecular-beam 35 – 40 and hot-wall 41 – 44 epitaxy techniques. As an alternative, several groups studied films obtained via layer-by-layer Mn-Sb deposition.…”

Section: Introductionmentioning

confidence: 99%

Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature

Oveshnikov

Zav’yalov

Trunkin

et al. 2021

Sci Rep

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In this study, we employed several experimental techniques to investigate structure and magnetic properties of poly(p-xylylene)–MnSb composites synthesized by low-temperature vapor deposition polymerization technique and MnSb films deposited at various temperatures. The presence of MnSb nanocrystallites in the studied films was verified by the results of X-ray diffraction, electron microscopy and Raman spectroscopy studies. The obtained data revealed the formation of Sb-rich sublayer with well-oriented Sb grains near the susbtrate, which seems to act as a buffer for the consequent poly(p-xylylene)–MnSb or MnSb layer growth. Increasing the polymer content results in qualitative change of surface morphology of studied films. At high polymer content the hybrid nanocomposite with MnSb nanoparticles embedded into poly(p-xylylene) matrix is formed. All investigated samples demonstrated detectable ferromagnetic response at room temperature, while the parameters of this response revealed a complex correlation with nominal composition, presented crystal phases and surface morphology of studied films. Estimated values of the Curie temperature of the samples are close to that of bulk MnSb.

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“…Virtual substrates can be used to lattice match materials for heteroepitaxy. [ 46 ] In the present case, InAs 1− x Sb x could be used to controllably strain Sb ultrathin films between −0.57% (

x = 0

) and +6.5% (

x = 1

). The tensile strain would be sufficient for induced band inversion in antimonene.…”

Section: Discussionmentioning

confidence: 99%

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

Mousley

Burrows

Nicklin

et al. 2022

Physica Status Solidi (b)

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Antimony ultrathin films in tensile strain are grown on InAs(111)B substrates and studied in situ using surface X‐ray diffraction. The detailed atomic structures of two highly crystalline Sb(0001) films are derived, with thicknesses of 19 and 4 bilayers. Features considered in structural modeling include interfacial intermixing, surface roughness, individual layer relaxations, and rotational twin domains (RTDs). The four‐bilayer film shows significant structural relaxation in every layer, while both films include RTDs. The results are discussed in relation to the topological properties of low‐dimensional Sb.

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Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Cited by 7 publications

References 35 publications

Hybrid Heteroepitaxial Growth Mode

Hybrid Heteroepitaxial Growth Mode

Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

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Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films

Cited by 7 publications

References 35 publications

Hybrid Heteroepitaxial Growth Mode

Hybrid Heteroepitaxial Growth Mode

Structural characterization and magnetic response of poly(p-xylylene)–MnSb and MnSb films deposited at cryogenic temperature

Structure of Strained Low‐Dimensional Sb by In Situ Surface X‐Ray Diffraction

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Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films