Studies of the quality of GdSiO–Si interface

Iwanowicz, M.; Jaśiński, Jakub; Gluszko, Grzegorz; Łukasiak, L.; Jakubowski, Andrzej; Gottlob, H. D. B.; Schmidt, M.

doi:10.1016/j.microrel.2011.03.006

Cited by 3 publications

(2 citation statements)

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“…43,44 Figures 5(b) and 5(c) indicate that for deposition pressures of 0.75 and 1.0 mbar, the dielectric stack also consists of an amorphous GdSiO x layer and a poly-Gd 2 O 3 layer whose thicknesses decrease with deposition pressure. Figure 5(d) shows that for 1.3 mbar, only an amorphous GdSiO x film is found.…”

Section: A Structural Characterizationmentioning

confidence: 99%

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Feijoo

Pampillón

Andrés

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inOptimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon J.Embedded argon as a tool for sampling local structure in thin plasma deposited aluminum oxide films Structural, optical, and electrical characterization of gadolinium oxide films deposited by low-pressure metalorganic chemical vapor deposition High j gadolinium oxide thin layers were deposited on silicon by high-pressure sputtering (HPS). In order to optimize the properties for microelectronics applications, different deposition conditions were used. Ti (scavenger) and Pt (nonreactive) were e-beam evaporated to fabricate metal-insulator-semiconductor (MIS) devices. According to x-ray diffraction, x-ray photoelectron spectroscopy, and Fourier-transform infrared spectroscopy, polycrystalline stoichiometric Gd 2 O 3 films were obtained by HPS. The growth rate decreases when increasing the deposition pressure. For relatively thick films (40 nm), a SiO x interface as well as the formation of a silicate layer (GdSiO x ) is observed. For thinner films, in Ti gated devices the SiO x interface disappears but the silicate layer extends over the whole thickness of the gadolinium oxide film. These MIS devices present lower equivalent oxide thicknesses than Pt gated devices due to interface scavenging. The density of interfacial defects D it is found to decrease with deposition pressure, showing a reduced plasma damage of the substrate surface for higher pressures. MIS with the dielectric deposited at higher pressures also present lower flatband voltage shifts DV FB in the C HF -V G hysteresis curves.

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Section: A Structural Characterizationmentioning

confidence: 99%

Optimization of gadolinium oxide growth deposited on Si by high pressure sputtering

Feijoo

Pampillón

Andrés

2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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show abstract

“…In the vast majority of cases charge-pumping does not require truly arbitrary signals but vector ones [4]. Limiting the generator to this class of signals results in considerable simplification of the design and enables digital synthesis to be used to shape the output signal.…”

Section: Arbitrary Waveform Generator (Awg)mentioning

confidence: 99%