Studies of EUV contamination mitigation

Graham, Samual; Malinowski, M. E.; Steinhaus, Chip; Grunow, Philip A.; Klebanoff, Leonard E.

doi:10.1117/12.472319

Cited by 14 publications

(6 citation statements)

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“…1,2 The two primary sources of contamination that degrade reflectivity are: ͑1͒ the carbon produced by the photodecomposition of background organic molecules, and ͑2͒ surface oxidation of the cap layer caused by a reaction with background H 2 O induced by EUVL radiation. Methods of removing carbon already exist, such as oxidation and treatment with atomic hydrogen, [3][4][5][6] but there is currently no way of removing the oxide layer. It is commonly believed that, while carbon contamination is reversible, surface oxidation is not.…”

Section: Introductionmentioning

confidence: 99%

Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

Nishiyama

Oizumi

Motai

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The reduction of Ru oxide was examined as a way of cleaning the cap layer of multilayer mirrors in extreme ultraviolet lithography (EUVL). Ru deposited on a Si surface was oxidized using electron cyclotron resonance (ECR) O2 plasma, and then treated with atomic hydrogen generated with a hot tungsten wire. An analysis of the surface composition by x-ray photoelectron spectroscopy and Auger electron spectroscopy revealed that atomic hydrogen removed the Ru oxide resulting from the ECR O2 plasma treatment. Additionally, atomic force microscopy observations showed that this treatment caused no increase in the surface roughness of the Ru. This indicates that the surface oxidation of EUVL mirrors is reversible, and can largely be eliminated by using atomic hydrogen and the proper cap layer.

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Section: Introductionmentioning

confidence: 99%

Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

Nishiyama

Oizumi

Motai

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…However, oxidation and carbon formation on the mirror are primarily caused by the dissociation of absorbed hydrocarbons, and need to be controlled. Although deposited carbon can be cleaned using atomic oxygen or hydrogen [66][67][68][69], more data on continuous high-power operation is needed for accurate evaluation of the stability and degradation of EUV optics. For a 10-mirror system, the total reflectance loss should be less than 10%, i.e., a single multilayer mirror should lose less than 1% reflectivity over its lifetime.…”

Section: Opticsmentioning

confidence: 99%

Next-generation lithography for 22 and 16 nm technology nodes and beyond

2011

Sci. China Inf. Sci.

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In this paper, next-generation lithography (NGL) for the 22 and 16 nm technology nodes and beyond is reviewed. A broad range of topics, including history, technologies, critical challenges, and the most plausible candidates are discussed. The 22 and 16 nm technology nodes rely on NGL. NGLs have been extensively studied. Because of technological issues, the semiconductor industry has stopped pursuing several NGLs, such as X-ray proximity lithography, ion projection lithography, and scattering with angular limitation projection electron lithography. Currently, the primary candidate technologies are extreme ultraviolet lithography (EUVL), maskless lithography (ML2), and nanoimprint lithography (NIL), with EUVL being the leading candidate. Since EUVL was first proposed in 1988, many studies have been conducted. Currently, there is no "show stopper" for EUVL. Moreover, challenges are present in almost all aspects of EUVL technology. Almost all primary semiconductor manufacturing companies plan to implement commercial pre-production step-and-scan exposure tools in 2011. However, EUVL power at an intermediate focusing level has not yet met the volume manufacturing requirements. EUVL resists have been significantly improved recently, but there is still a critical need to meet requirements on resolution, line width roughness, and sensitivity. Creating a defect-free EUVL mask is another obstacle to the application of EUVL. ML2 and NIL, like EUVL, have also undergone significant progress recently, but throughput, defect control, and cost remain the critical impediments for practical application.

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“…Organic gases exist in the lithography tool in spite of a vacuum. They cause carbon depositions on the multi-layer mirrors in the tool by EUV light irradiations [3][4][5][6][7][8][9][10][11][12] . Deposited carbon degrades mirror's reflectance through absorption and interference.…”

Section: Introductionmentioning

confidence: 99%

Carbon deposition on multi-layer mirrors by extreme ultra violet ray irradiation

Matsunari¹,

Aoki²,

Murakami³

et al. 2007

SPIE Proceedings

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Organic gases cause carbon depositions on the multi-layer mirrors by Extreme Ultra Violet (EUV) light irradiations in EUV lithography tool. The dependences on organic gas species, organic gas pressure and EUV light intensity in the carbon deposition were researched in order to understand this reaction. EUV light was irradiated on a (Si/Mo) multilayer mirror sample injecting organic gas like buthane, buthanol, methyl propionate, hexane, perfluoro octane, decane, decanol, methyl nonanoate, diethyl benzene, dimethyl phthalate and hexadecane. X-ray photoelectron spectroscopy measurements revealed that organic gases with heavier molecule weight or higher boiling temperature caused faster carbon deposition rates. Carbon deposition rates increased linearly with organic gas pressures. Dependence on EUV light intensity was estimated from comparisons between an EUV light profile and carbon distributions on irradiated samples. Carbon deposition rates increased rapidly, but became saturated at higher EUV light intensities. Three chemical reactions, an adsorption, a desorption and a carbon deposition by EUV light irradiation, were taken into account to explain the behavior of the carbon deposition. Electron irradiation on a mirror sample revealed that photoelectrons emitting from the mirror surface played an important role in carbon deposition.

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Studies of EUV contamination mitigation

Cited by 14 publications

References 0 publications

Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

Reduction of oxide layer on Ru surface by atomic-hydrogen treatment

Next-generation lithography for 22 and 16 nm technology nodes and beyond

Carbon deposition on multi-layer mirrors by extreme ultra violet ray irradiation

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